Abstract:X-ray and -ray irradiations are performed on frontside-illuminated (FSI) 2-D-planar and backside-illuminated (BSI) 3-D-stacked CMOS single-photon avalanche diodes (SPADs). Different degradations are observed for nearly the same deposited total ionizing dose (TID). The 2-D SPADs are only slightly degraded, with a dark count rate (DCR), which increases after 320 krad(SiO2) with X-rays, while the DCR spectrum after 300 krad(SiO2) with -rays is spread toward high DCR (3 to 4 decade increase). As these SPADs are less sensitive to ionizing radiation effects, this suggests a strong domination of the displacement damage contribution of -rays due to secondary electrons induced by Compton scattering, leading to point defects inside the silicon bulk. A large DCR tail in the distribution is also observed with 3-D-stacked SPAD pixels, but the histogram peak is close to the one caused by X-rays. This suggests that 3-D-stacked SPADs are more sensitive to ionizing radiation due to a larger Si/SiO2 interface area that can be degraded and a designed electric field imposed by the BSI configuration that maximizes charge collections in the avalanche region. Activation energy measurements confirm this result, by comparing data with a 62-MeV proton irradiation. The DCR alteration dependence with the SPAD voltage during X-ray irradiations is also studied, with an increasing degradation with the SPAD bias. Then, the random telegraph signal (RTS) behavior of the DCR is studied: while X-rays do not induced DCR fluctuations, different RTS characteristics are observed between the two technologies, suggesting a major role of point defects. Comparisons with proton irradiations and an annealing study strengthen this assumption.

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes

Effects of X-Ray and γ-Ray Irradiations on 2-D-Planar and 3-D-Stacked CMOS SPADs

Impact of Silicide Layer on Single Photon Avalanche Diodes in a 130 Nm CMOS Process

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Effects of Proton Irradiation on a CMOS Image Sensor

Characterization of small single photon avalanche diode fabricated using standard 180 nm CMOS process for digital SiPM

Characterization of Single Photon Avalanche Diodes Fabricated by 0.13μm CMOS Technology

Effect of proton radiation on 8T CMOS image sensors for space applications

Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Proton Irradiation Damage and Annealing Effects in ON Semiconductor J-Series Silicon Photomultipliers

Investigations on proton-irradiation-induced spacer damage in deep-submicron MOSFETs

Noise optimization of single-photon avalanche diodes fabricated in 110 nm CMOS image sensor technology

Research on proton displacement damage effects in charge-domain accumulation type TDI CMOS image sensors

Degradation of CMOS APS Image Sensors Induced by Total Ionizing Dose Radiation at Different Dose Rates and Biased Conditions

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation

Effect of Very High-Fluence Proton Radiation on 6H-Sic Photoconductive Proton Detectors

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors