Abstract:Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single photon avalanche diodes (SPADs) in commercial CMOS processes creates the opportunity to combine a matrix of SPADs and an application-specific integrated circuit in the same die. The potential of such digital SiPMs (dSiPMs) is still being explored, while it already is an established technology in certain applications, like light detection and ranging (LiDAR). A prototype dSiPM, produced in the LFoundry 150-nm CMOS technology, was designed and tested at DESY. The dSiPM central part is a matrix of 32 by 32 pixels. Each pixel contains four SPADs, a digital front-end, and has an area of 69.6 $\times$ 76 um$^2$. The chip has four time-to-digital converters and includes further circuitry for data serialization and data links. This work focuses on the characterization of the prototype in an electron beam at the DESY II Test Beam facility, to study its capability as a tracking and timing detector for minimum ionizing particles (MIPs). The MIP detection efficiency is found to be dominated by the fill factor and on the order of 31 %. The position of the impinging MIPs can be measured with a precision of about 20 um, and the time of the interaction can be measured with a precision better than 50 ps for about 85 % of the detected events. In addition, laboratory studies on the breakdown voltage, dark count rate, and crosstalk probability, as well as the experimental methods required for the characterization of such a sensor type in a particle beam are presented.

Characterization of small single photon avalanche diode fabricated using standard 180 nm CMOS process for digital SiPM

A new single-photon avalanche diode in 90nm standard CMOS technology

Characterization of Single Photon Avalanche Diodes Fabricated by 0.13μm CMOS Technology

Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage

Junction-Optimized SPAD With 50.6% Peak PDP and 0.64 cps/μm2 DCR at 2 V Excess Bias Voltage in 130 nm CMOS

Impact of Silicide Layer on Single Photon Avalanche Diodes in a 130 Nm CMOS Process

Noise optimization of single-photon avalanche diodes fabricated in 110 nm CMOS image sensor technology

Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process

Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology

An 8×1k SPAD detector with TDI in 0.13μm CMOS technology

An 8&#x00d7;1k SPAD Detector with TDI in 0.13&#x03bc;m CMOS Technology

Surface Textured Silicon Single-Photon Avalanche Diode

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Wafer-Level Characterization and Monitoring Platform for Single-Photon Avalanche Diodes

High-efficiency and low-jitter Silicon single-photon avalanche diodes based on nanophotonic absorption enhancement

Simulation of Silicon Waveguide Single-Photon Avalanche Detectors for Integrated Quantum Photonics

Electrical and Optical 3D Modelling of Light-Trapping Single-Photon Avalanche Diode

Free-running 4H-Sic Single-Photon Detector with Ultralow Afterpulse Probability at 266 Nm

Design of an Electronic Interface for Single-Photon Avalanche Diodes

Test Beam Characterization of a Digital Silicon Photomultiplier

A Monolithic Readout Circuit for High-Frequency Sine Wave Gating Single-Photon Detection