Abstract:A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 {\mu}m thick epilayer with a resistivity of 350 {\Omega}cm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2.

What problem does this paper attempt to address?

This paper aims to study the radiation - hardness performance of SiGe BiCMOS monolithic silicon pixel detectors in high - radiation environments. Specifically, researchers irradiated the detectors with 70 MeV protons, with the maximum irradiation dose reaching \(1\times 10^{16}\text{n eq/cm}^2\), to evaluate their application potential in high - energy particle collision experiments. The paper focuses on the following aspects: 1. **The influence of radiation on the operating point of the detector**: - The influence of proton irradiation on the bias currents (\(I_{\text{preamp}}\) and \(I_{\text{fbk}}\)) in the front - end electronics was studied. It was found that as the irradiation dose increases, the maximum available current of the bias circuit decreases, thus limiting the operating range of the front - end electronics. 2. **Changes in signal and noise**: - The signal amplitude, voltage noise (\(\sigma_V\)), signal slope (\(\frac{dV}{dt}\)), and signal - to - noise ratio (SNR) of the detector before and after irradiation were tested using a \(^{90}\text{Sr}\) radioactive source. The results show that these parameters are basically unaffected before the irradiation dose reaches \(6\times 10^{14}\text{n eq/cm}^2\); but at higher doses, both the signal amplitude and voltage noise decrease, resulting in a lower SNR. 3. **Evaluation of time jitter**: - The time resolution of the detector was evaluated by measuring the time jitter (\(\sigma_{90\text{Sr}}^t\)) of the signal. The time jitter is defined as the ratio of the voltage noise to the signal slope: \[ \text{Time jitter}=\frac{\sigma_V}{\frac{dV}{dt}} \] - The results show that at low irradiation doses, the time jitter remains at about 21 ps; but as the irradiation dose increases, the time jitter gradually increases, reaching a maximum of 57 ps. 4. **The influence of sensor bias voltage**: - The influence of different sensor bias voltages (HV) on the signal amplitude and time jitter was studied. It was found that for an unirradiated chip, a bias voltage of 200 V is sufficient to fully deplete it; while for a chip with an irradiation dose reaching \(1\times 10^{16}\text{n eq/cm}^2\), increasing the bias voltage can increase the signal amplitude and reduce the time jitter. In summary, through systematic experiments and data analysis, this paper comprehensively evaluates the performance changes of SiGe BiCMOS monolithic silicon pixel detectors in high - radiation environments, providing an important reference for future applications in high - energy physics experiments.

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