Abstract:Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 <a class="link-external link-http" href="http://neq.cm" rel="external noopener nofollow">this http URL</a>-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.

Characterisation of 3D trench silicon pixel sensors irradiated at 1⋅1017 1 MeV neqcm-2

Signal height in silicon pixel detectors irradiated with pions and protons

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Beam tests of silicon pixel 3D-sensors developed at SINTEF

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Position resolution with 25 um pitch pixel sensors before and after irradiation

Radiation hardness study on a CMOS pixel sensor for charged particle tracking

Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer

Radiation tolerant, thin, passive CMOS sensors read out with the RD53A chip

TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors

Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector

Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment

First Production of New Thin 3D Sensors for HL-LHC at FBK

Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations

3D silicon pixel sensors for the CMS experiment tracker upgrade

First experimental validation of silicon-based sensors for monitoring ultra-high dose rate electron beams