Abstract:Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 <a class="link-external link-http" href="http://neq.cm" rel="external noopener nofollow">this http URL</a>-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.

Beam tests of silicon pixel 3D-sensors developed at SINTEF

Characterisation of 3D trench silicon pixel sensors irradiated at 1⋅1017 1 MeV neqcm-2

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

Performance of novel silicon n-in-p planar Pixel Sensors

First Production of New Thin 3D Sensors for HL-LHC at FBK

Characterization of SINTEF 3D diodes with trenched-electrode geometry before and after neutron irradiation

Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser

Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector

Planar pixel sensors for the ATLAS upgrade: beam tests results

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First experimental validation of silicon-based sensors for monitoring ultra-high dose rate electron beams

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Signal height in silicon pixel detectors irradiated with pions and protons

Study of X-ray radiation damage in the AGIPD sensor for the European XFEL

Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations

Design and performance of the silicon sensors for the CMS barrel pixel detector

Silicon 3D Microdosimeters for Advanced Quality Assurance in Particle Therapy

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

3D silicon pixel detectors for the ATLAS Forward Physics experiment

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade