Abstract:4H-SiC belongs to the family of the third-generation semiconductors and features excellent properties, e.g., high radiation resistance, high charge collection efficiency (CCE), exceptional thermal stability, and low sensitivity to -rays. These advantages make 4H-SiC suitable for developing neutron detectors used in intense neutron fields characteristic of tokamaks. However, 4H-SiC detectors suffer from performance degradation after neutron irradiation to high fluence. The knowledge of the degradation evolution of 4H-SiC detector performance parameters with neutron fluence in specific situations can not only help optimize the detector design but also help understand and even correct experimental data for its better use. The technology computer-aided design (TCAD) software is used here to predict the detailed parameters in 4H-SiC bulk underlying the detector performance degradation resulting from neutron irradiations in the vicinity of experimental advanced superconducting tokamak (EAST) tokamak, a fusion device, and the reason for the detector performance degradation caused by neutron irradiation is analyzed. Our 4H-SiC detector damage analysis model employed in TCAD yields CCE values, which have a reasonable consistency with experimental results obtained in references for neutron fluences up to cm . Additionally, at the neutron fluence of cm , the electric fields within 4H-SiC bulk have significant distortions. Nonetheless, the CCE remains at about 40%, demonstrating an extremely high tolerance to neutron irradiations. Meanwhile, our study reveals that enhancing carrier transport rates and strengthening the field within the sensitive region can effectively mitigate the degradation of detector performance, thereby enhancing the detector's radiation tolerance.

Characterization of SINTEF 3D diodes with trenched-electrode geometry before and after neutron irradiation

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Beam tests of silicon pixel 3D-sensors developed at SINTEF

Characterisation of 3D trench silicon pixel sensors irradiated at 1⋅1017 1 MeV neqcm-2

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Characterization of irradiated p-type silicon detectors for TCAD surface radiation damage model validation

Characteristics of 3D Micro-Structured Semiconductor High Efficiency Neutron Detectors

Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer

Study of Bulk Damage of High Dose Gamma Irradiated p-type Silicon Diodes with Various Resistivities

Effect of Neutron Irradiation on Current-Voltage Characteristics of Packaged Diodes Based on 6H-SiC pn Structures

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Neutron irradiation test of Hamamatsu, SensL and AdvanSiD UV-extended SiPMs

Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers

First fabrication of full 3D-detectors at SINTEF

Charge collection properties of irradiated depleted CMOS pixel test structures

Investigation of the Performance Degradation of 4H-SiC Neutron Detectors Using MCNP and TCAD

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling

Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

Electrical characteristics and deep-level transient spectroscopy of a fast-neutron-irradiated 4H–SiC Schottky barrier diode