Abstract:We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors ATLASpix1, TSI produced prototypes reported breakdown voltage greater than 100 V. The chosen wafer of MCz 20 <a class="link-external link-http" href="http://Ohm.cm" rel="external noopener nofollow">this http URL</a> P-type substrate resistivity can deplete a few tenths of um, where the process-driven surface damage can have a greater impact on device operating conditions before and after irradiation. In an aim to understand device intrinsic performance at the irradiated case, a dedicated neutron irradiation campaign has been made at JSI for different fluences. Characterizations have been performed at different temperatures after irradiation to analyze the leakage current and breakdown voltage before and after irradiation. TSI prototypes showed a breakdown voltage decrease 90 V due to impact ionization and enhanced effective doping concentration. Results demonstrated for the neutron-irradiated devices up to the fluence of 2 X 10^15 neq/cm2 can still safely be operated at a voltage high enough to allow for high efficiency. Accelerated Annealing steps also made on selective irradiated ATLASPix2 samples, equivalent to more than two years of room-temperature annealing (at 20 degC), and they showed the reassuring expected breakdown voltage increase and damage constant rate alpha^* (geometry dependent) decrease, driven by the beneficial annealing.

Charge collection properties of irradiated depleted CMOS pixel test structures

Charge Collection Studies in Irradiated Hv-Cmos Particle Detectors

Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

Charge Collection Characterisation with the Transient Current Technique of the Ams H35DEMO CMOS Detector after Proton Irradiation

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

Fluence Dependence of Charge Collection of irradiated Pixel Sensors

Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology

Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements

Charge collection properties of TowerJazz 180 nm CMOS Pixel Sensors in dependence of pixel geometries and bias parameters, studied using a dedicated test-vehicle: the Investigator chip

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Characterization of irradiated RD53A pixel modules with passive CMOS sensors

Signal height in silicon pixel detectors irradiated with pions and protons

Characterisation of 3D trench silicon pixel sensors irradiated at 1⋅1017 1 MeV neqcm-2

Radiation hardness study on a CMOS pixel sensor for charged particle tracking

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process