Fluence Dependence of Charge Collection of irradiated Pixel Sensors

T. Rohe,D. Bortoletto,V. Chiochia,L.M. Cremaldi,S. Cucciarelli,A. Dorokhov,C. Hoermann,D. Kim,M. Konecki,D. Kotlinski,K. Prokofiev,C. Regenfus,D.A. Sanders,S. Son,T. Speer,M. Swartz

DOI: https://doi.org/10.1016/j.nima.2005.06.037

2005-01-04

Abstract:The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between $4.7\times 10^{13}$ and $2.6\times 10^{15} \Neq$ have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed analogue readout and is therefore well suited to measure the charge collection properties of the sensors. In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated.

Instrumentation and Detectors

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to evaluate and quantify the charge collection performance and particle detection efficiency of silicon pixel sensors used in the CMS experiment in a high - radiation environment. Specifically, the main objectives of the study include:

1. **Evaluating the change in charge collection performance with radiation dose**: The paper explores how the charge collection efficiency of the sensors changes under different radiation doses (from \(4.7\times 10^{13}\) to \(2.6\times 10^{15}\, \text{neq/cm}^2\)). Through experimental measurements, the authors hope to understand whether these sensors can maintain sufficient signal strength in the environment of the Large Hadron Collider (LHC).

2. **Studying the influence of position - dependence**: In addition to the influence of radiation dose, the author also investigates the influence of different positions within the sensor (such as the bias point and the aluminum wire area) on the charge collection efficiency. These areas may have lower sensitivity for design reasons, thus affecting the overall performance.

3. **Optimizing sensor operating conditions**: By analyzing the charge collection situation under different bias voltages, the optimal operating voltage is determined to ensure reliable signal reading even in a high - radiation environment.

4. **Verifying whether the sensor meets the requirements of the CMS experiment**: Ultimately, the research aims to confirm whether these sensors can work normally under the expected radiation levels and meet the requirements of the CMS experiment for spatial resolution and other performance indicators.

In summary, this study, through detailed tests of silicon pixel sensors under different radiation doses, provides important data support and technical references for future LHC upgrades and applications in similar high - radiation environments.