Abstract:Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the HL-LHC. For experiments at hadron colliders, radiation hardness is a key requirement which is not fulfilled by standard CMOS sensor designs that collect charge by diffusion. This issue has been addressed by depleted active pixel sensors in which electronics are embedded into a large deep implantation ensuring uniform charge collection by drift. Very first small prototypes of hybrid depleted active pixel sensors have already shown a radiation hardness compatible with the ATLAS requirements. Nevertheless, to compete with the present hybrid solutions a further reduction in costs achievable by a fully monolithic design is desirable. The H35DEMO is a large electrode full reticle demonstrator chip produced in AMS 350 nm HV-CMOS technology by the collaboration of Karlsruher Institut für Technologie (KIT), Institut de Física d'Altes Energies (IFAE), University of Liverpool and University of Geneva. It includes two large monolithic pixel matrices which can be operated standalone. One of these two matrices has been characterised at beam test before and after irradiation with protons and neutrons. Results demonstrated the feasibility of producing radiation hard large area fully monolithic pixel sensors in HV-CMOS technology. H35DEMO chips with a substrate resistivity of 200$\Omega$ cm irradiated with neutrons showed a radiation hardness up to a fluence of $10^{15}$n$_{eq}$cm$^{-2}$ with a hit efficiency of about 99% and a noise occupancy lower than $10^{-6}$ hits in a LHC bunch crossing of 25ns at 150V.

Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer

Time Resolution of a SiGe BiCMOS Monolithic Silicon Pixel Detector without Internal Gain Layer with a Femtosecond Laser

Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer

Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer

Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer

A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology

M.i.p. detection performances of a 100 us read-out CMOS pixel sensor with digitised outputs

Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70$~μ$m pixel pitch

Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70 μm pixel pitch

Design and Performance of HV CMOS Sensors for Future Colliders by the RD50 Collaboration

Pixel detector system development at Diamond Light Source

First results on monolithic CMOS detector with internal gain

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

Design and Characterization of a Silicon Photomultiplier in 0.35- ${\mu }\text{m}$ CMOS

Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications

Development of a single-photon imaging detector with pixelated anode and integrated digital read-out

Detection resolving power of SiC Timepix3 detector to electrons, neutrons, ions and protons

Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer