Abstract:Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 \mu m pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 x 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 x 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to maintain the high - efficiency detection efficiency and time resolution of silicon pixel detectors in a high - radiation environment. Specifically, the research team developed a monolithic silicon pixel detector without an internal gain layer and tested its performance under high - proton irradiance. This detector uses front - end electronics fabricated with 130 - nm SiGe BiCMOS technology and has low noise, low power consumption, and a very fast response speed. ### Main problems 1. **Maintenance of detection efficiency**: The research explored how to maintain the high detection efficiency of the detector in a high - radiation environment. In the experiment, the detection efficiency of the detector was 99.96% before irradiation, but after receiving proton irradiation of \(1\times 10^{16}\, \text{n}_{\text{eq}}/\text{cm}^2\), the detection efficiency dropped to 96.2%. By increasing the sensor bias voltage to 300 V, the detection efficiency can be restored to 99.7%. 2. **Maintenance of time resolution**: The research also focused on how to maintain the time resolution of the detector in a high - radiation environment. The time resolution before irradiation was 20 picoseconds, but after receiving proton irradiation of \(1\times 10^{16}\, \text{n}_{\text{eq}}/\text{cm}^2\), the time resolution deteriorated to 53 picoseconds. By increasing the sensor bias voltage to 300 V, the time resolution can be improved to 45 picoseconds. ### Research background - **Requirements of high - energy physics experiments**: As the high - luminosity data acquisition period of the CERN Large Hadron Collider (LHC) approaches, a large number of event accumulations are expected in the experiments. Therefore, it is necessary to upgrade the existing detectors and add a timing layer with a time resolution of several tens of picoseconds. - **Radiation tolerance problem**: Although the current low - gain avalanche detectors (LGAD) have an internal gain layer, their radiation tolerance is poor, which limits their application in high - radiation environments. Therefore, the research team attempts to develop a detector without an internal gain layer to improve radiation tolerance. ### Experimental methods - **Detector design**: The detector contains a hexagonal pixel matrix with a 100 - micron pitch, and the front - end electronics are fabricated using 130 - nm SiGe BiCMOS technology. - **Irradiation experiment**: Samples were irradiated with 70 - MeV protons in the CYRIC facility, and the maximum irradiance reached \(1\times 10^{16}\, \text{n}_{\text{eq}}/\text{cm}^2\). - **Testing method**: In the CERN SPS test beam line, a 120 - GeV/c pion beam was used for testing to evaluate the detection efficiency and time resolution. ### Conclusions - **Detection efficiency**: By increasing the sensor bias voltage, a relatively high detection efficiency can be maintained in a high - radiation environment. - **Time resolution**: Although the time resolution decreases in a high - radiation environment, it can be partially restored by increasing the sensor bias voltage. - **Radiation tolerance**: The research results show that the amplifier using SiGe HBT can still maintain good performance under an irradiation dose of up to \(1\times 10^{16}\, \text{n}_{\text{eq}}/\text{cm}^2\). In summary, this research provides an important reference for the design of monolithic silicon pixel detectors used in future high - energy physics experiments, especially for applications in high - radiation environments.

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