Abstract:We present the development of a single-photon detector and the connected read-out electronics. This `hybrid' detector is based on a vacuum tube, transmission photocathode, microchannel plate and a pixelated CMOS read-out anode encapsulating the analog and digital-front end electronics. This assembly will be capable of detecting up to $10^9$ photons per second with simultaneous measurement of position and time. The pixelated read-out anode used is based on the Timepix4 ASIC ($65~\mathrm{nm}$ CMOS technology) designed in the framework of the Medipix4 collaboration. This ASIC is an array of $512\times448$ pixels distributed on a $55~\mathrm{\mu m}$ square pitch, with a sensitive area of $\sim 7~\mathrm{cm}^2$. It features $50$-$70~\mathrm{e^{-}}$ equivalent noise charge, a maximum rate of $2.5~\mathrm{Ghits/s}$, and allows to time-stamp the leading-edge time and to measure the Time-over-Threshold (ToT) for each pixel. The pixel-cluster position combined with its ToT information will allow to reach $5$-$10~\mathrm{\mu m}$ position resolution. This information can also be used to correct for the leading-edge time-walk achieving a timing resolution of the order of $10~\mathrm{ps}$. The detector will be highly compact thanks to the encapsulated front-end electronics allowing local data processing and digitization. An FPGA-based data acquisition board, placed far from the detector, will receive the detector hits using $16$ electro-optical links operated at $10.24~\mathrm{Gbps}$. The data acquisition board will decode the information and store the relevant data in a server for offline analysis. These performance will allow significant advances in particle physics, life sciences, quantum optics or other emerging fields where the detection of single photons with excellent timing and position resolutions are simultaneously required.

Time resolution of a SiGe BiCMOS monolithic silicon pixel detector without internal gain layer with a femtosecond laser

Time Resolution of a SiGe BiCMOS Monolithic Silicon Pixel Detector without Internal Gain Layer with a Femtosecond Laser

20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer

Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer

Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer

Radiation tolerance of SiGe BiCMOS monolithic silicon pixel detectors without internal gain layer

First results on monolithic CMOS detector with internal gain

Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70$~μ$m pixel pitch

Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70 μm pixel pitch

Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype

A monolithic ASIC demonstrator for the Thin Time-of-Flight PET scanner

A Full Functional Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology

MiniCACTUS: A 65 ps Time Resolution Depleted Monolithic CMOS Sensor

Development of a single-photon imaging detector with pixelated anode and integrated digital read-out

Characterization of the demonstrator of the fast silicon monolithic ASIC for the TT-PET project

M.i.p. detection performances of a 100 us read-out CMOS pixel sensor with digitised outputs

Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process