Abstract:This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 32 × 32 pixel matrix at 70 μm pitch. The IC provides per-quadrant time stamping and hit-map readout, and is fabricated in a standard 150-nm CMOS technology. Each dSiPM pixel consists of four single-photon avalanche diodes (SPADs) sharing a quenching and subsequent processing circuitry and has a fill factor of 30 %. A sub-100 ps precision, 12-bit time-to-digital converter (TDC) provides timestamps per quadrant with an acquisition rate of 3 MHz. Together with the hit map, the total sustained data throughput of the IC amounts to 4 Gbps. Measurements obtained in a dark, temperature-stable environment as well as by using a pulsed laser environment show the full dSiPM-IC functionality. The dark-count rate (DCR) as function of the overvoltage and temperature, the TDC resolution, differential and integral nonlinearity (DNL/INL) as well as the propagation delays across the matrix are presented. With aid of additional peripheral test structures, the main building blocks are characterized and key parameters are presented.

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on designing and characterizing a monolithically integrated digital silicon photomultiplier (dSiPM) integrated circuit (IC), which has the following features: 1. **High frame rate**: The IC provides a read - out rate of millions of frames per second (at the MHz level). 2. **High - time precision**: The time - stamp precision of each quadrant reaches sub - 100 picoseconds (ps). 3. **High - spatial resolution**: The pixel pitch is 70 micrometers (μm), and the pixel matrix is 32×32. 4. **Low dark count rate (DCR)**: Through optimized design, the dark noise is reduced and the signal quality is improved. 5. **High data throughput**: The total continuous data throughput reaches 4 Gbps. Specifically, the main objectives of the paper include: - **Design and implementation**: Design and implement a monolithically integrated dSiPM - IC, which integrates a 32×32 dSiPM pixel matrix, and each pixel contains four single - photon avalanche diodes (SPADs), sharing quenching and subsequent processing circuits. - **Time - stamp and hit - map read - out**: The IC provides the time - stamp and hit - map read - out functions for each quadrant, uses a 12 - bit time - to - digital converter (TDC) for time - stamp recording, and the acquisition rate is 3 MHz. - **Performance testing**: Measure in a dark, temperature - stable environment and in a pulsed - laser environment to verify the full functionality of the IC. - **Analysis of key parameters**: Analyze the changes of the dark count rate (DCR) with over - voltage and temperature, TDC resolution, differential non - linearity (DNL) and integral non - linearity (INL), and the propagation delay in the matrix. Through these designs and tests, the paper aims to show the advantages of this new dSiPM - IC in terms of high sensitivity, high frame rate and accurate time resolution, which is suitable for application scenarios requiring high - performance photon detection, such as particle - tracking detectors, photon detectors, etc.

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