A Square-Bordered Position-Sensitive Silicon Photomultiplier Toward Distortion-Free Performance With High Spatial Resolution

Yu Peng,Wenxing Lv,Lei Dai,Tianqi Zhao,Kun Liang,Ru Yang,Dejun Han
DOI: https://doi.org/10.1109/led.2020.3033046
IF: 4.8157
2020-12-01
IEEE Electron Device Letters
Abstract:A two-dimensional (2D) square-bordered position-sensitive (PS) silicon photomultiplier (SiPM) toward distortion-free performance with high spatial resolution is reported in this letter. The device, based on SiPM technology of an epitaxial quenching resistor, contains a central cap resistive region enclosed by a narrow square-shaped metal ring contact located at the surface periphery. Four small output metal pads are connected to the metal ring at each corner to read out signal charges. With an active area of 6.14 mm $times6.14$ mm, the PS-SiPM demonstrated an average position measurement error (PME) of $86.9~mu text{m}$ without correction, which accounted for 1.4% of the side length of the active area. The average position resolutions were demonstrated to be $sim 130.7~mu text{m}$ and $sim 135.6~mu text{m}$ in the X and Y directions, respectively, for incident light with a spot diameter of 80 $mu text{m}$ and a mean photoelectron number (MPEN) of $sim 600$ . In addition, an intrinsic radioactive-light image of a pixelated $12times 12$ lutetium-yttrium oxyorthosilicate (LYSO) array with each element volume of $0.475times 0.475times {6}$ mm<sup>3</sup> was clearly resolved by the 2D square-bordered PS-SiPM.
engineering, electrical & electronic
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