On Analog Silicon Photomultipliers in Standard 55-nm BCD Technology for LiDAR Applications

Jiuxuan Zhao,Tommaso Milanese,Francesco Gramuglia,Pouyan Keshavarzian,Shyue Seng Tan,Michelle Tng,Louis Lim,Vinit Dhulla,Elgin Quek,Myung-Jae Lee,Edoardo Charbon
DOI: https://doi.org/10.1109/jstqe.2022.3161089
IF: 4.9
2022-09-01
IEEE Journal of Selected Topics in Quantum Electronics
Abstract:We present an analog silicon photomultiplier (SiPM) based on a standard 55-nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16 × 16 single-photon avalanche diodes (SPADs) and measures 0.29 × 0.32 mm<span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="1.054ex" height="2.343ex" style="vertical-align: -0.171ex;" viewBox="0 -934.9 453.9 1008.6" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use transform="scale(0.707)" xlink:href="#MJMAIN-32" x="0" y="513"></use></g></svg></span>. Each SPAD cell is passively quenched by a monolithically integrated 3.3 V thick oxide transistor. The measured gain is 3.4 × 10<span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="1.054ex" height="2.343ex" style="vertical-align: -0.171ex;" viewBox="0 -934.9 453.9 1008.6" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use transform="scale(0.707)" xlink:href="#MJMAIN-35" x="0" y="513"></use></g></svg></span> at 5 V excess bias voltage. The single-photon timing resolution (SPTR) is 185 ps and the multi-photon timing resolution (MPTR) is 120 ps at 3.3 V excess bias voltage. We integrate the SiPM into a co-axial light detection and ranging (LiDAR) system with a time-correlated single-photon counting (TCSPC) module in FPGA. The depth measurement up to 25 m achieves an accuracy of 2 cm and precision of 2 mm under the room ambient light condition. With co-axial scanning, the intensity and depth images of complex scenes with resolutions of 128 × 256 and 256 × 512 are demonstrated. The presented SiPM enables the development of cost-effective LiDAR system-on-chip (SoC) in the advanced technology.<svg xmlns="http://www.w3.org/2000/svg" style="display: none;"><defs id="MathJax_SVG_glyphs"><path stroke-width="1" id="MJMAIN-32" d="M109 429Q82 429 66 447T50 491Q50 562 103 614T235 666Q326 666 387 610T449 465Q449 422 429 383T381 315T301 241Q265 210 201 149L142 93L218 92Q375 92 385 97Q392 99 409 186V189H449V186Q448 183 436 95T421 3V0H50V19V31Q50 38 56 46T86 81Q115 113 136 137Q145 147 170 174T204 211T233 244T261 278T284 308T305 340T320 369T333 401T340 431T343 464Q343 527 309 573T212 619Q179 619 154 602T119 569T109 550Q109 549 114 549Q132 549 151 535T170 489Q170 464 154 447T109 429Z"></path><path stroke-width="1" id="MJMAIN-35" d="M164 157Q164 133 148 117T109 101H102Q148 22 224 22Q294 22 326 82Q345 115 345 210Q345 313 318 349Q292 382 260 382H254Q176 382 136 314Q132 307 129 306T114 304Q97 304 95 310Q93 314 93 485V614Q93 664 98 664Q100 666 102 666Q103 666 123 658T178 642T253 634Q324 634 389 662Q397 666 402 666Q410 666 410 648V635Q328 538 205 538Q174 538 149 544L139 546V374Q158 388 169 396T205 412T256 420Q337 420 393 355T449 201Q449 109 385 44T229 -22Q148 -22 99 32T50 154Q50 178 61 192T84 210T107 214Q132 214 148 197T164 157Z"></path></defs></svg>
engineering, electrical & electronic,optics,physics, applied,quantum science & technology
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