Abstract:Many industrial and scientific applications, ranging from 3D imaging (such as LIDAR, surveillance, object tracking) to Time Correlated Single Photon Counting (TCSPC), require the ability to perform time-resolved detection of weak light signals, down to single-photon level. Single-Photon Avalanche Diodes are solid-state detectors capable of single-photon sensitivity in the visible and near-infrared wavelength regions and compatible with standard silicon processes. This demand driven the development of low cost, large size CMOS SPAD imagers. In this work we present the design and characterization of a time-gated 32x32 SPAD image sensor fabricated in a 0.16 μm BCD (Bipolar-CMOS-DMOS) technology. The sensor is based on an innovative 16x16 macropixel structure, each composed by four SPADs with independent sensing front-end and event counters, plus a shared Timeto- Digital Converter (TDC). This approach enables higher fill-factor (9.6% with a pixel pitch of 100 μm) by sharing the costly (in terms of area) TDC resource, as well as reduced power dissipation. The imager provides simultaneous photon-timing and photon-counting data and features a 12 bit, 75 ps bin width TDC, which can perform one conversion per each gate window, with up to 62 windows per data readout frame. Two main operation modes are available: a single-photon mode, where an arbitration circuit within the macropixel is used to share the TDC among the 4 SPADs, but with no loss of X-Y resolution (i.e. keeping information about the triggered SPAD); and a two-photon-coincidence mode, where the TDC performs a conversion only if two SPADs of the macropixel are triggered within a preset coincidence window. Lastly, the sensor features multiple readout modes, with varying amount of output data, in order to fit different end-user applications. The imager is capable of 100 kfps (frames per second) in full readout mode, and up to 400 kfps in a reduced data set mode.

A $256\times256$ , 100-kfps, 61% Fill-Factor SPAD Image Sensor for Time-Resolved Microscopy Applications

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

A 512 × 512 SPAD Image Sensor With Integrated Gating for Widefield FLIM

A SPAD-Based QVGA Image Sensor for Single-Photon Counting and Quanta Imaging

Time-gated SPAD camera with reconfigurable macropixels for LIDAR applications

A CMOS SPAD Sensor With a Multi-Event Folded Flash Time-to-Digital Converter for Ultra-Fast Optical Transient Capture

3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth Sensing

An 80 × 25 pixel CMOS single-photon range image sensor with a flexible on-chip time gating topology for solid state 3D scanning

Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70$~μ$m pixel pitch

Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70 μm pixel pitch

An Indirect Time-of-Flight SPAD Pixel With Dynamic Comparator Reuse for a Single-Slope ADC

An integrated 256 channel TCSPC camera with sub-70ps single photon timing per channel

A new single-photon avalanche diode in 90nm standard CMOS technology

Junction-Optimized SPAD With 50.6% Peak PDP and 0.64 cps/μm2 DCR at 2 V Excess Bias Voltage in 130 nm CMOS

A 64 × 128 3D-Stacked SPAD Image Sensor for Low-Light Imaging

A 13-Bit, 12-ps Resolution Vernier Time-to-Digital Converter Based on Dual Delay-Rings for SPAD Image Sensor

Single-photon imaging in complementary metal oxide semiconductor processes

Non-line-of-sight imaging using a time-gated single photon avalanche diode

Design and Evaluation of EMPIX2, a 100 Kfps, High Dynamic Range Pixel Detector Readout ASIC for Electron Microscopy

Single-photon avalanche diode imagers in biophotonics: review and outlook

SPAD-based asynchronous-readout array detectors for image-scanning microscopy