Abstract:Many industrial and scientific applications, ranging from 3D imaging (such as LIDAR, surveillance, object tracking) to Time Correlated Single Photon Counting (TCSPC), require the ability to perform time-resolved detection of weak light signals, down to single-photon level. Single-Photon Avalanche Diodes are solid-state detectors capable of single-photon sensitivity in the visible and near-infrared wavelength regions and compatible with standard silicon processes. This demand driven the development of low cost, large size CMOS SPAD imagers. In this work we present the design and characterization of a time-gated 32x32 SPAD image sensor fabricated in a 0.16 μm BCD (Bipolar-CMOS-DMOS) technology. The sensor is based on an innovative 16x16 macropixel structure, each composed by four SPADs with independent sensing front-end and event counters, plus a shared Timeto- Digital Converter (TDC). This approach enables higher fill-factor (9.6% with a pixel pitch of 100 μm) by sharing the costly (in terms of area) TDC resource, as well as reduced power dissipation. The imager provides simultaneous photon-timing and photon-counting data and features a 12 bit, 75 ps bin width TDC, which can perform one conversion per each gate window, with up to 62 windows per data readout frame. Two main operation modes are available: a single-photon mode, where an arbitration circuit within the macropixel is used to share the TDC among the 4 SPADs, but with no loss of X-Y resolution (i.e. keeping information about the triggered SPAD); and a two-photon-coincidence mode, where the TDC performs a conversion only if two SPADs of the macropixel are triggered within a preset coincidence window. Lastly, the sensor features multiple readout modes, with varying amount of output data, in order to fit different end-user applications. The imager is capable of 100 kfps (frames per second) in full readout mode, and up to 400 kfps in a reduced data set mode.

3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth Sensing

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

A megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

A 64 × 128 3D-Stacked SPAD Image Sensor for Low-Light Imaging

A $256\times256$ , 100-kfps, 61% Fill-Factor SPAD Image Sensor for Time-Resolved Microscopy Applications

Time-gated SPAD camera with reconfigurable macropixels for LIDAR applications

Challenges and Solutions of Next-Generation Imager: CMOS Single Photon Avalanche Diode Image Sensor

A 1920 $\times$ 1080 Array 2-D/3-D Image Sensor with 3- $\mu$ S Row-Time Single-Slope ADC and 100-Mhz Demodulated PPD Locked-In Pixel

A SPAD-Based QVGA Image Sensor for Single-Photon Counting and Quanta Imaging

A Wide Spectral Response Single Photon Avalanche Diode for Backside-Illumination in 55-Nm CMOS Process

A <tex>$128\times 1$</tex> Pixels, High Dynamic Range SPAD Imager in <tex>$0.18\ \mu\text{m}$</tex> CMOS Technology

A Junction-Optimized SPAD with 50.6% PeakPDP and 0.64 Cps/μm2 DCR at 2 V ExcessBias Voltage in 130 Nm CMOS

Junction-Optimized SPAD With 50.6% Peak PDP and 0.64 cps/μm2 DCR at 2 V Excess Bias Voltage in 130 nm CMOS

A $128\times 1$ Pixels, High Dynamic Range SPAD Imager in $0.18\ \mu\text{m}$ CMOS Technology.

A 512 × 512 SPAD Image Sensor With Integrated Gating for Widefield FLIM

A 3 × 3 SPAD-Based 198-Db Ultra-High Dynamic Range Dual-Mode Light Sensing Module with Auto-Mode-Switching and Auto-Gain-Control

A Back-Illuminated 4μm P⁺N-Well Single Photon Avalanche Diode Pixel Array with 0.36hz/μm² Dark Count Rate at 2.5 V Excess Bias Voltage

SPAD-based asynchronous-readout array detectors for image-scanning microscopy

A Compact SPAD Pixel with Active Quenching and Recharging

Backside-illuminated single photon avalanche diode with low dark count rate

An 80 × 25 pixel CMOS single-photon range image sensor with a flexible on-chip time gating topology for solid state 3D scanning