Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Gianluca Aglieri Rinella,Giacomo Alocco,Matias Antonelli,Roberto Baccomi,Stefania Maria Beole,Mihail Bogdan Blidaru,Bent Benedikt Buttwill,Eric Buschmann,Paolo Camerini,Francesca Carnesecchi,Marielle Chartier,Yongjun Choi,Manuel Colocci,Giacomo Contin,Dominik Dannheim,Daniele De Gruttola,Manuel Del Rio Viera,Andrea Dubla,Antonello di Mauro,Maurice Calvin Donner,Gregor Hieronymus Eberwein,Jan Egger,Laura Fabbietti,Finn Feindt,Kunal Gautam,Roman Gernhaeuser,James Julian Glover,Laura Gonella,Karl Gran Grodaas,Ingrid-Maria Gregor,Hartmut Hillemanns,Lennart Huth,Armin Ilg,Artem Isakov,Daniel Matthew Jones,Antoine Junique,Jetnipit Kaewjai,Markus Keil,Jiyoung Kim,Alex Kluge,Chinorat Kobdaj,Artem Kotliarov,Kritsada Kittimanapun,Filip Křížek,Gabriela Kucharska,Svetlana Kushpil,Paola La Rocca,Natthawut Laojamnongwong,Lukas Lautner,Roy Crawford Lemmon,Corentin Lemoine,Long Li,Francesco Librizzi,Jian Liu,Anna Macchiolo,Magnus Mager,Davide Marras,Paolo Martinengo,Silvia Masciocchi,Serena Mattiazzo,Marius Wilm Menzel,Alice Mulliri,Mia Rose Mylne,Francesco Piro,Alexandre Rachevski,Marika Rasà,Karoliina Rebane,Felix Reidt,Riccardo Ricci,Sara Ruiz Daza,Gaspare Saccà,Isabella Sanna,Valerio Sarritzu,Judith Schlaadt,David Schledewitz,Gilda Scioli,Serhiy Senyukov,Adriana Simancas,Walter Snoeys,Simon Spannagel,Miljenko Šuljić,Alessandro Sturniolo,Nicolas Tiltmann,Antonio Trifirò,Gianluca Usai,Tomas Vanat,Jacob Bastiaan Van Beelen,Laszlo Varga,Michele Verdoglia,Gianpiero Vignola,Anna Villani,Haakan Wennloef,Jonathan Witte,Rebekka Bettina Wittwer

2024-03-14

Abstract:Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10-25 $\mu$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations.

Instrumentation and Detectors

What problem does this paper attempt to address?

The paper primarily explores the test structures of Monolithic Active Pixel Sensors (MAPS) manufactured using the 65-nanometer CMOS imaging process from Tower Partners Semiconductor Co., and characterizes and optimizes their performance for applications in next-generation vertex and tracking detectors in high-energy physics experiments. The core objectives of the paper include: 1. **Technical Verification and Optimization**: Investigating signal collection characteristics by designing and manufacturing different variants of test chips, and verifying the feasibility of this 65-nanometer CMOS technology for particle detection. 2. **Radiation Tolerance Assessment**: Testing the performance of these sensors under varying levels of ionizing radiation to meet the requirements of future high-energy physics experiments. 3. **Performance Parameter Measurement**: Evaluating key performance metrics of the sensors, such as spatial resolution, particle detection efficiency, and radiation tolerance, using various testing methods (e.g., X-ray sources and particle beam tests). Specifically, the paper details the design and implementation of the Analog Pixel Test Structure (APTS), a small prototype chip containing 16 pixels. These pixels have different design characteristics, such as doping levels, geometries, and spacings (10 to 25 micrometers). By conducting experiments using a 55Fe X-ray source and particle beam tests, researchers were able to meticulously study the charge collection performance and assess the performance of these sensors under different radiation levels. In summary, the main purpose of this paper is to provide an efficient and radiation-tolerant new type of particle detector for future high-energy physics experiments through in-depth research and optimization of 65-nanometer CMOS technology.

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