Abstract:Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the HL-LHC. For experiments at hadron colliders, radiation hardness is a key requirement which is not fulfilled by standard CMOS sensor designs that collect charge by diffusion. This issue has been addressed by depleted active pixel sensors in which electronics are embedded into a large deep implantation ensuring uniform charge collection by drift. Very first small prototypes of hybrid depleted active pixel sensors have already shown a radiation hardness compatible with the ATLAS requirements. Nevertheless, to compete with the present hybrid solutions a further reduction in costs achievable by a fully monolithic design is desirable. The H35DEMO is a large electrode full reticle demonstrator chip produced in AMS 350 nm HV-CMOS technology by the collaboration of Karlsruher Institut für Technologie (KIT), Institut de Física d'Altes Energies (IFAE), University of Liverpool and University of Geneva. It includes two large monolithic pixel matrices which can be operated standalone. One of these two matrices has been characterised at beam test before and after irradiation with protons and neutrons. Results demonstrated the feasibility of producing radiation hard large area fully monolithic pixel sensors in HV-CMOS technology. H35DEMO chips with a substrate resistivity of 200$\Omega$ cm irradiated with neutrons showed a radiation hardness up to a fluence of $10^{15}$n$_{eq}$cm$^{-2}$ with a hit efficiency of about 99% and a noise occupancy lower than $10^{-6}$ hits in a LHC bunch crossing of 25ns at 150V.

Prototype measurement results in a 65 nm technology and TCAD simulations towards more radiation tolerant monolithic pixel sensors

Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors

TCAD simulations of silicon strip and pixel sensor optimization

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology

Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance

Radiation tolerant, thin, passive CMOS sensors read out with the RD53A chip

Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

Characterization and simulation of radiation effects on active edges n-on-p technology planar pixel sensors

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

Validation of the 65 nm TPSCo CMOS imaging technology for the ALICE ITS3

Characterisation of 3D trench silicon pixel sensors irradiated at 1⋅1017 1 MeV neqcm-2

Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors

Development of depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

Design and Performance of HV CMOS Sensors for Future Colliders by the RD50 Collaboration

Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications