Abstract:Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in successful productions of ATLAS and Medipix-based silicon pixel sensors by a few foundries. However, the drawbacks of edgeless sensors are poor radiation hardness for ionizing radiation and non-uniform charge collection by edge pixels. In this work, the radiation hardness of edgeless sensors with different polarities has been investigated using Synopsys TCAD with X-ray radiation-damage parameters implemented. Results show that if no conventional guard ring is present, none of the current designs are able to achieve a high breakdown voltage (typically < 30 V) after irradiation to a dose of ~10 MGy. In addition, a charge-collection model has been developed and was used to calculate the charges collected by the edge pixels of edgeless sensors when illuminated with X-rays. The model takes into account the electric field distribution inside the pixel sensor, the absorption of X-rays, drift and diffusion of electrons and holes, charge sharing effect, and threshold settings in ASICs. It is found that the non-uniform charge collection of edge pixels is caused by the strong bending of electric field and the non-uniformity depends on bias voltage, sensor thickness and distance from active edge to the last pixel ("edge space"). In particular, the last few pixels close to the active edge of the sensor are not sensitive to low-energy X-rays (< 10 keV) especially for sensors with thicker Si and smaller edge space. The results from the model calculation have been compared to measurements and good agreement was obtained. The model has been used to optimize the edge design.

Characterization and simulation of radiation effects on active edges n-on-p technology planar pixel sensors

Performance of active edge pixel sensors

Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade

Recent progress of the ATLAS Planar Pixel Sensor R&D Project

TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors

Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

TCAD simulations of silicon strip and pixel sensor optimization

Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

A Full Functional Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

Development of n-in-p pixel modules for the ATLAS Upgrade at HL-LHC

Achievements of the ATLAS upgrade Planar Pixel Sensors R&D Project

Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment

Characterization of passive CMOS sensors with RD53A pixel modules

Comparing different bulk radiation damage models in TCAD simulations of small-pitch 3D Si sensors

Radiation hardness study on a CMOS pixel sensor for charged particle tracking