Blister formation in He-H co-implanted InP: A comprehensive atomistic study

N. Daghbouj,Jiajie Lin,H.S. Sen,M. Callisti,Bingsheng Li,M. Karlik,T. Polcar,Zhenghao Shen,Min Zhou,Tiangui You,Xin Ou
DOI: https://doi.org/10.1016/j.apsusc.2021.149426
IF: 6.7
2021-06-01
Applied Surface Science
Abstract:<p>The blistering efficiency in He-H-ions co-implanted and annealed InP has been found to peak and vanish in a narrow range of ion fluence ratio (Φ<sub>H</sub>/Φ<sub>He</sub><em>=</em>15–35) with a fixed He fluence of 2x10<sup>16</sup> He<sup>+</sup>/cm<sup>2</sup>. The blisters are formed at low fluence (Φ<sub>H</sub>/Φ<sub>He</sub><em>=</em>15), peaked in the middle (Φ<sub>H</sub>/Φ<sub>He</sub><em>=</em>25), and disappeared at the high fluence ratio (Φ<sub>H</sub>/Φ<sub>He</sub><em>=</em>35). To get a fundamental understanding of blister formation in nanoscale, the defect profiles were studied by various experimental techniques combined with FEM and ab-initio simulations. Cross-section TEM images showed that at a low fluence ratio, He and H are stored in microcracks and bubbles whereas, at a high fluence ratio, the ions are trapped only inside bubbles. These atomic processes that occur during and after co-implantation and annealing are presented together with detailed scenarios in an attempt to explain our results. Based on DFT simulations, the de-trapping of He atoms from the small clusters is energetically cheaper compared to the migration of He from the large clusters formed at high fluence. Moreover, at a high fluence ratio, the presence of large clusters inhibits the He diffusion to the small clusters (precursor of blisters) by capturing migrating He atoms.</p>
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
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