Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Radiation-induced Damage in GaP by MeV Helium Ions

Damage Production and Annealing During Mev He Ion Rbs/Channeling Analysis of Gap

Studies on Surface Damage Induced by Ion Bombardment

Characteristics of High-Energy N+-Implanted Damage in Gasb

Analysis of Implantation-Induced Damage and Amorphization of Gasb

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Proton Irradiation-Induced Defects in Undoped Gasb Studied by Positron Lifetime Spectroscopy and Photoluminescence

Study of Radiation Damage in Mg+-implanted GaN

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Wet etching of GaN damaged by heavy ion irradiation

Helium effects on the surface and subsurface evolutions in single-crystalline tungsten

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3

Radiation Damage Accumulation in α-Ga2O3 under P and PF4 Ion Bombardment

Study of damage generation induced by focused helium ion beam in silicon

Radiation-induced defects in the InGaN/GaN superlattice structure

Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles

Damage Evolution in Gan under Mev Heavy Ion Implantation