Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam
Yao Shude,Zhou Shengqiang,Jiao Shengxian,Meng Zhaoxiang,Lu Yihong,Sun Changchun,Sun Chang,A. Vantomme,G. Langouche,B. Pipeleers,qian zhao,SD Yao,SQ Zhou,SX Jiao,ZX Meng,YH Lu,CC Sun,C Sun
DOI: https://doi.org/10.1016/S0257-8972(02)00263-3
IF: 4.865
2002-01-01
Surface and Coatings Technology
Abstract:The structure and crystal quality of GaN using Rutherford Backscattering Spectrometry and Channeling were studied. The samples were grown on sapphire by metal-organic vapor-phase epitaxy. The H+, He+, N+ with different ion energies and doses were implanted into GaN. Post-implantation annealing were investigated. We observed 7–8 orders increasing of resistivity by Hall measurements after specific temperature annealing, and the optimized annealing temperature is approximately 200–400 °C for H+, He+ and N+ respectively. Even after 600–700 °C annealing, the resistivity is still very high. We think vacancies and radioactive damage by implantation are responsible for resistivity changes in GaN samples.