Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3
Alan G. Jacobs,Joseph A. Spencer,Marko J. Tadjer,Boris N. Feigelson,Abbey Lamb,Ming-Hsun Lee,Rebecca L. Peterson,Fikadu Alema,Andrei Osinsky,Yuhao Zhang,Karl D. Hobart,Travis J. Anderson
DOI: https://doi.org/10.1007/s11664-024-11075-z
IF: 2.1
2024-05-12
Journal of Electronic Materials
Abstract:As gallium oxide-based heterojunction devices gain prominence, low-resistance contacts to aluminum gallium oxide material are of increasing importance for high performance and access to modulation doped layers. Here, the activation of ion-implanted silicon donors is investigated as a function of donor density from 5 × 10 18 cm −3 to 1 × 10 20 cm −3 , activation anneal duration from 6 s to 600 s, and activation temperature from 900°C to 1140°C. Importantly, ohmic behavior was achievable across a reasonably wide process window at moderate to high doping concentrations. Specific contact resistance of 1 × 10 −3 Ω cm 2 and sheet resistance of 2.8 kΩ/□ were achieved for a 60 nm-deep 1 × 10 20 cm −3 box implant after activation at 1000°C for 6 s with standard Ti/Au contacts. Under these conditions, an activation efficiency of 7% was observed with Hall mobility of ~32 cm 2 /Vs. Furthermore, we demonstrate a Schottky diode formed of implanted material with a rectification ratio > 10 6 and further confirm the Hall carrier density results using capacitance–voltage profiling analysis. Finally, we show the significant impact of anneal duration and the potential for deleterious over-annealing which reduces the active carrier density, mobility, and resultant material conductivity.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied