Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of reduced size and weight systems. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers GaN epitaxial layers for subsequent p-type ion implantation can be grown on sapphire substrates but vertical devices are optimal when using GaN homoepitaxial structures. Unlike most other semiconductor substrates, GaN substrates are not grown from the melt. Hydride vapor phase epitaxy or ammonothermal growth are predominantly used to produce substrates and these substrates will experience higher temperatures during subsequent epitaxy and ion implant activation annealing than occurs during substrate formation. In both types of substrates, the threading dislocation distribution can vary by orders of magnitude – these variations correlate well with leakage currents in vertical devices. The activation of the implanted p-type dopants requires high temperature annealing. For most semiconductors, an annealing temperature of ~ 2/3 the melting point leads to a high activation fraction (> 95%) of the implanted species. The implantation process introduces large concentrations of native defects as well as the p-type implant (typically Mg), so it is necessary to remove the defects and for the dopants to locate on substitutional sites (Ga sites for Mg). We demonstrate how the formation of inverted domain defects at temperatures below 1400 °C correlate with Mg-compound formation, whereas annealing temperatures 1400 °C and above do not lead to the formation of such compounds but rather high Mg activation efficiencies. These recent developments, partly through the ARPA-E PNDIODES program as well as international efforts, have brought understanding of the key processing steps and substrate requirements to achieve high activation efficiency p-type doping for planar, vertical device structures in a scalable framework.

Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Protection of Isolated and Active Regions in AlGaN/GaN HEMTs Using Selective Laser Annealing*

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Improvement of device isolation using field implantation for GaN MOSFETs

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTs

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Si-implantation for Low Ohmic Contact Resistances in RF GaN HEMTs

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

(Invited) Advancements in Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

High Pressure Processing of Ion Implanted GaN

Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD