Abstract:The modification of GaN with Au nanoparticles is a promising way for manipulating optical properties in optoelectronics and enhancing the sensitivity of GaN-based substrates used in Surface Enhanced Raman Spectroscopy. Ion implantation is an attractive method for the preparation of high-purity metal nanoparticles on the surface or within the bulk of solids, although this process in crystals is not yet fully understood. Here we study the specific stages of Au nanoparticle formation in c-plane GaN crystals implanted with 1.85 MeV Au ions to the fluence range of 1.5×1016 - 7×1016 cm−2. The implanted samples were annealed at 800 °C in an ammonia atmosphere for 20 minutes to support the nucleation of Au nanoparticles and prevent surface decomposition. The structural and optical properties of the samples were investigated by a combination of Rutherford backscattering spectroscopy in channeling mode (RBS-C), Transmission Electron Microscopy (TEM), Raman spectroscopy, photoluminescence (PL) and diffuse-reflectance spectroscopy (DRS). The two damaged regions, namely at the depth and at the surface, were identified. The depth region exhibits saturation of damage, unlike the surface region reaching an amorphous state for the highest implantation fluence. RBS-C revealed multimodal Au depth profiles for higher ion fluences, which were subsequently redistributed after thermal annealing due to the formation of Au nanoparticles, as confirmed by TEM. Au nanoparticles with fcc structure have been successfully synthesized with the Au-ion implantation fluence of 5×1016 cm−2 with the sizes mostly of 4 – 20 nm resulting in increased optical scattering and absorption within the spectral range of 500 – 700 nm associated with surface plasmon resonance (SPR) and the emergence of blue (2.8 eV) and red (2 eV) photoluminescence bands linked to the combined effect of SPR and implantation-induced defects.

Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

EFFECTS OF ION-IMPLANTATION ON THE ANNEALING BEHAVIOR OF AMORPHOUS-GERMANIUM AND GOLD BILAYERS

Impact of High-Temperature Mg-implantation on Defects and Dopants Distribution in GaN

High Pressure Processing of Ion Implanted GaN

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Influence of GaN Buffer Layer for InN Growth

Influence of Implanted Mg Concentration on Defects and Mg Distribution in GaN

Change in the surface state of the single-crystal germanium as a result of implantation with silver ions and annealing with light pulses

Unidirectional Expansion of Lattice Parameters in GaN Induced by Ion Implantation

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Evolution of Au nanoparticles in c-plane GaN under the heavy ion implantation and their optical properties

Structural and magnetic impact of Cr +-implantation into GaN thin film

Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices

Structural Properties of Ne Implanted GaN

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

The in-situ luminescence measurements of GaN/Al 2 O 3 film under different energy proton irradiation