Abstract:Crystallization of amorphous materials by thermal annealing has been investigated for numerous applications in the fields of nanotechnology, such as thin-film transistors and thermoelectric devices. The phase transition and shape evolution of amorphous germanium (Ge) and Ag@Ge core-shell nanoparticles with average diameters of 10 and 12 nm, respectively, were investigated by high-energy electron beam irradiation and in situ heating within a transmission electron microscope. The transition of a single Ge amorphous nanoparticle to the crystalline diamond cubic structure at the atomic scale was clearly demonstrated. Depending on the heating temperature, a hollow Ge structure can be maintained or transformed into a solid Ge nanocrystal through a diffusive process during the amorphous to crystalline phase transition. Selected area diffraction patterns were obtained to confirm the crystallization process. In addition, the thermal stability of Ag@Ge core-shell nanoparticles with an average core of 7.4 and a 2.1 nm Ge shell was studied by applying the same beam conditions and temperatures. The results show that at a moderate temperature (e.g., 385 °C), the amorphous Ge shell can completely crystallize while maintaining the well-defined core-shell structure, while at a high temperature (e.g., 545 °C), the high thermal energy enables a freely diffusive process of both Ag and Ge atoms on the carbon support film and leads to transformation into a phase segregated Ag-Ge Janus nanoparticle with a clear interface between the Ag and Ge domains. This study provides a protocol as well as insight into the thermal stability and strain relief mechanism of complex nanostructures at the single nanoparticle level with atomic resolution.

Change in the surface state of the single-crystal germanium as a result of implantation with silver ions and annealing with light pulses

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

EFFECTS OF ION-IMPLANTATION ON THE ANNEALING BEHAVIOR OF AMORPHOUS-GERMANIUM AND GOLD BILAYERS

Selenium implantation in GaAs

Nanocrystalline formation and optical properties of germanium thin films prepared by physical vapor deposition

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Impact of post-ion implantation annealing on Se-hyperdoped Ge

Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Wafer scale epitaxial germanium on silicon (0 0 1) using pulsed laser annealing

Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

Intrinsic Gettering in Germanium-Doped Czochralski Crystal Silicon Crystals

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Investigating impurities and surface properties in germanium co-doped multi-crystalline silicon: a combined computational and experimental investigation

Tuning the bandgap and photoluminescence properties of Ge/Al2O3 multilayer thin films using annealing and ion beam irradiation