Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

Percolation Network of PdGe Phase Formed on Ge Surface by High-Current Pd-ion Implantation

Electrochemical Pore Etching in N- and P-Type Ge

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Enabling tailored nanoporous germanium by quantifying the evolution of structural properties during self-irradiation

Impact of ion implantation on nickel germanides formation with pure-Ge substrate and the electrical dependence of NiGe/Ge schottky diode on contact size

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Effect of Fractal Crystallization on the Depositing Sequence of A Pd/Ge Thin Film System

Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

Abnormal Morphology of Amorphous Germanium Films in Contact with Palladium

Heavily phosphorus doped germanium with local strain compensation effect by Co-implantation and rapid thermal process

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Localized and efficient machining of germanium based on the auto-coupling between picosecond laser irradiation and electrochemical dissolution: Mechanism validation and surface characterization

TDPAC and first-principles study of electronic and structural properties of Pd-vacancy complex in undoped germanium

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement