Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

TDPAC and first-principles study of electronic and structural properties of Pd-vacancy complex in undoped germanium

Ge-vacancy Pair in Ge-doped Czochralski Silicon

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Vacancy Clustering in Dislocation-Free High-Purity Germanium

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Percolation Network of PdGe Phase Formed on Ge Surface by High-Current Pd-ion Implantation

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Calorimetric and transport investigations of CePd_{2+x}Ge_{2-x} (x=0 and 0.02) up to 22 GPa

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Vacancy complexes in nonequilibrium germanium-tin semiconductors

Fundamental Study of Hydrogen Segregation at Vacancy and Grain Boundary in Palladium

The structure, energy, and electronic states of vacancies in Ge nanocrystals

Hybrid DFT simulation of sodium impurity and impurity-vacancy defect complexes in germanium: perspectives of defect engineering for activation of shallow donors

3D Imaging and Manipulation of Subsurface Selenium Vacancies in PdSe_{2}.

Spectroscopic Observation and Molecular Dynamics Simulation of Ga Surface Segregation in Liquid Pd-Ga Alloys

Gold fillings unravel the vacancy role in the phase transition of GeTe

Structure and Electronic Properties of Amorphous Ge–Pd Alloys Manifesting the Metal-Insulator Transition. I. Atomic Structure and Electrical Conductivity

Pressure study on the interplay between magnetic order and valence-change crossover in EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$