Abstract:Palladium diselenide (PdSe2), as an emerging two-dimensional (2D) layered material, is gaining growing attention in nanoelectronics and optoelectronics due to its thickness-dependent band gap, high carrier mobility, and good air stability. However, its asymmetric pentagon structure is inclined to breed defects. Herein, the intrinsic Se vacancy-induced trap states and their influence on the hopping transport in PdSe2 are systematically investigated. We provide direct evidence that Se vacancies exist in the fresh PdSe2 samples, which results in the localized trapping states inside the band gap. For the few-layer PdSe2, at 77 K, the trap density (Dit) near the midgap is about 2.2 × 1013 cm-2 eV-1, whereas at 295 K, the Dit value increases to ∼7.1 × 1013 cm-2 eV-1. By comparison, the multilayer PdSe2 shows nonobvious temperature-dependent trap behaviors with almost unchanged Dit values of ∼8.1 × 1012 cm-2 eV-1 at midgap in the temperature range between 77 and 295 K. Thus, trap states in the few-layer PdSe2 are more vulnerable to temperature effect. Transport measurements demonstrated that both few-layer and multilayer PdSe2 field-effect transistor (FET) devices show n-type dominant ambipolar behaviors. The electron mobility in the multilayer PdSe2 FET is nearly 15-fold higher than that in the few-layer PdSe2 FET at 315 K, probably owing to the decreased effective mass and suppression of charge impurity scattering in the thicker channel material. However, both FET devices exhibit variable-range hopping over a temperature range from 77 to 240 K and thermally activated hopping at temperatures above 240 K. The hopping transport mechanism is strongly associated with the Se vacancy-induced localized states with poor screening and strong potential fluctuations. This study reveals the important role of structural defects in tailoring and improving the charge transport properties of PdSe2.

3D Imaging and Manipulation of Subsurface Selenium Vacancies in PdSe_{2}.

Defects in Highly Anisotropic Transition-Metal Dichalcogenide PdSe<sub>2</sub>

Study of Intrinsic Defect States of FeSe with Scanning Tunneling Microscopy

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Point and complex defects in monolayer Pd Se 2 : Evolution of electronic structure and emergence of magnetism

Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

A Shallow Acceptor of Phosphorous Doped in MoSe<sub>2</sub> Monolayer

Intrinsic Point Defects in Ultrathin 1T-PtSe2 Layers

Semiconducting few-layer PdSe<sub>2</sub> and Pd<sub>2</sub>Se<sub>3</sub>: native point defects and contacts with native metallic Pd<sub>17</sub>Se<sub>15</sub>

Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe2 Semiconductor Devices

Layer-dependent Optical and Dielectric Properties of Large-size PdSe_2 Films Grown by Chemical Vapor Deposition

Temperature-sensitive Spatial Distribution of Defects in PdSe2 Flakes

Anisotropic point defects in rhenium diselenide monolayers

Abnormal behavior of preferred formation of the cationic vacancies from the interior in a γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state

Identification and Manipulation of Atomic Defects in Monolayer SnSe

Scanning Tunneling Microscopy Examinations of the Effects of Defects on the Charge Density Wave Order in the Chemical Vapor Deposition-Derived TaSe2 on Au Foils

Structure, Stability, and Kinetics of Vacancy Defects in Monolayer PtSe2: A First-Principles Study

Janus Doping of Sulfur into Platinum Diselenide Ribbons

Formation Of Hexagonal Pdse2 For Electronics And Catalysis

Atomic-Scale Probing of Reversible Li Migration in 1T-V 1+ x Se 2 and the Interactions between Interstitial V and Li.

Super-resolved optical mapping of reactive sulfur-vacancy in 2D transition metal dichalcogenides