Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Defects in Highly Anisotropic Transition-Metal Dichalcogenide PdSe<sub>2</sub>

Study of Intrinsic Defect States of FeSe with Scanning Tunneling Microscopy

Point and complex defects in monolayer Pd Se 2 : Evolution of electronic structure and emergence of magnetism

3D Imaging and Manipulation of Subsurface Selenium Vacancies in PdSe_{2}.

Intrinsic Point Defects in Ultrathin 1T-PtSe2 Layers

Semiconducting few-layer PdSe<sub>2</sub> and Pd<sub>2</sub>Se<sub>3</sub>: native point defects and contacts with native metallic Pd<sub>17</sub>Se<sub>15</sub>

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Atomic-Level Dynamics of Point Vacancies and the Induced Stretched Defects in 2D Monolayer PtSe<sub>2</sub>

Tuning Electronic and Optical Properties of Monolayer PdSe2 by Introducing Defects: First-Principles Calculations

Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe2 Semiconductor Devices

Temperature-sensitive Spatial Distribution of Defects in PdSe2 Flakes

Scanning Tunneling Microscopy Examinations of the Effects of Defects on the Charge Density Wave Order in the Chemical Vapor Deposition-Derived TaSe2 on Au Foils

Tunable Electron Transport in Defect-Engineered PdSe$_\mathrm{2}$

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Layer-dependent Optical and Dielectric Properties of Large-size PdSe_2 Films Grown by Chemical Vapor Deposition

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Atomic Structure of Defects and Dopants in 2D Layered Transition Metal Dichalcogenides.

The study of intrinsic defect state of FeSe with scanning tunneling microscopy

Defect-Induced Ultrafast Nonadiabatic Electron-Hole Recombination Process in PtSe2 Monolayer.

Defects controlled hole doping and multivalley transport in SnSe single crystals