Abstract:Three‐inch diameter, 3 kg mass, high‐purity germanium crystals are grown with a net carrier concentration of equivalent to 1 part per trillion and a dislocation density (etch pit density values) of 103–104 cm−2. These single crystals are needed for the fabrication of radiation detectors to be used in astrophysics and particle physics studies. High‐purity germanium (HPGe) single crystals find their applications as radiation detectors especially for spectroscopy of high‐energy photons and particles in nuclear physics. Growing "detector‐grade" HPGe single crystals, with tailored structural defects and controlled impurity content, uniform throughout the crystal is a challenging task in this type of crystalline semiconductor material. All different process steps for HPGe, namely, i) reducing germanium dioxide powder into Ge metal; ii) zone refining of intrinsic source material (6 N) up to an ultrahigh purity (13 N); iii) Czochralski growth of high‐purity single crystals, are developed in house. A specific preparatory coating process for zone refining is entrenched as part of this work. Gallium, a dominant impurity usually found in HPGe, can be avoided. Using these advanced process know‐hows, a technology to grow volume Ge single crystals of large diameter (3 in.) with very high purity (net carrier concentration ≈ 5 × 1010 cm−3 or equivalent to 1 part per trillion level) is successfully developed. The zone‐refined Ge bars and the crystals show p‐type conductivity. Some crystals exhibit n‐type conductivity, and n–p or p–n transition is encountered in a single growth experiment. Besides the first results of encompassing very high‐purity crystals with uniform diameter, a controlled dislocation density (≈104 cm−2) can be realized.

Vacancy Clustering in Dislocation-Free High-Purity Germanium

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

A View of the Present Status and Future Prospecis of High Purity Germanium

Investigating Influential Parameters for High-Purity Germanium Crystal Growth

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

High Purity Germanium for Detector Fabrication

Ge-vacancy Pair in Ge-doped Czochralski Silicon

Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

Clustering of vacancy defects in high-purity semi-insulating SiC

Germanium in Czochralski Silicon

Effects of Germanium on Movement of Dislocations in P-Type Czochralski Silicon

Vacancy complexes in nonequilibrium germanium-tin semiconductors

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Chemical Impurities and Lattice Defects in High-Purity Germanium

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

On the solubility and diffusivity of the intrinsic point defects in germanium

Enhanced Spectral Density of a Single Germanium Vacancy Center in a Nanodiamond by Cavity-Integration

Germanium effect on void defects in Czochralski silicon

TDPAC and first-principles study of electronic and structural properties of Pd-vacancy complex in undoped germanium