Abstract:Three‐inch diameter, 3 kg mass, high‐purity germanium crystals are grown with a net carrier concentration of equivalent to 1 part per trillion and a dislocation density (etch pit density values) of 103–104 cm−2. These single crystals are needed for the fabrication of radiation detectors to be used in astrophysics and particle physics studies. High‐purity germanium (HPGe) single crystals find their applications as radiation detectors especially for spectroscopy of high‐energy photons and particles in nuclear physics. Growing "detector‐grade" HPGe single crystals, with tailored structural defects and controlled impurity content, uniform throughout the crystal is a challenging task in this type of crystalline semiconductor material. All different process steps for HPGe, namely, i) reducing germanium dioxide powder into Ge metal; ii) zone refining of intrinsic source material (6 N) up to an ultrahigh purity (13 N); iii) Czochralski growth of high‐purity single crystals, are developed in house. A specific preparatory coating process for zone refining is entrenched as part of this work. Gallium, a dominant impurity usually found in HPGe, can be avoided. Using these advanced process know‐hows, a technology to grow volume Ge single crystals of large diameter (3 in.) with very high purity (net carrier concentration ≈ 5 × 1010 cm−3 or equivalent to 1 part per trillion level) is successfully developed. The zone‐refined Ge bars and the crystals show p‐type conductivity. Some crystals exhibit n‐type conductivity, and n–p or p–n transition is encountered in a single growth experiment. Besides the first results of encompassing very high‐purity crystals with uniform diameter, a controlled dislocation density (≈104 cm−2) can be realized.

High Purity Germanium for Detector Fabrication

Investigating Influential Parameters for High-Purity Germanium Crystal Growth

A View of the Present Status and Future Prospecis of High Purity Germanium

Chemical Impurities and Lattice Defects in High-Purity Germanium

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices

Gamma Ray Detectors Made from High Purity Germanium

Characterization of high-purity germanium detectors with amorphous germanium contacts in cryogenic liquids

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Technology development of high purity germanium crystals for radiation detectors

Origin and Control of the Dominant Impurities in High-Purity Germanium

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Germanium: From its discovery to SiGe devices

Impurity concentration dependent electrical conduction in germanium crystal at low temperatures

Characterization of high-purity germanium (Ge) crystals for developing novel Ge detectors

Zone Refinement of Germanium Crystals

Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts

Vacancy Clustering in Dislocation-Free High-Purity Germanium

Germanium in Czochralski Silicon