Abstract:Improving the mechanical strength of Czochralski (CZ) silicon is of significance for increasing the manufacturing yield of integrated circuits. In this work, we have comparatively investigated the dislocation gliding behaviors in the conventional CZ silicon, nitrogen (N)-doped CZ silicon, germanium (Ge)-doped CZ silicon as well as Ge and N co-doped CZ silicon subjected to the indentations for 30 min at different temperatures in the range of 850–1050 °C with an interval of 50 °C. It is found that the suppressing effect of N-doping on the dislocation gliding is strongest at 950 °C and becomes slightly weakened at higher temperatures, while Ge-doping does not exert a remarkable suppressing effect on the dislocation gliding until the temperature exceeds 950 °C. The co-doping of N and Ge impurities takes both advantages of N- and Ge-doping to suppress the dislocation gliding in CZ silicon at the aforementioned temperatures. More importantly, at 1000 and 1050 °C that are the typical processing temperatures for integrated circuits, the N and Ge co-doping exhibits a stronger suppressing effect on the dislocation gliding in CZ silicon than the single Ge- or N-doping. This indicates that the mechanical strength of CZ silicon in terms of the resistance of dislocation gliding at a high temperature can be further improved by co-doping Ge and N impurities. It is believed that the N-doping can result in the formation of larger grown-in oxygen precipitates and N–O complex-related pinning agents within the dislocations to suppress the dislocation gliding at 850–1050 °C with the strongest suppressing effect at 950 °C, while the suppressing effect of Ge-doping on the dislocation gliding at the temperatures exceeding 950 °C is tentatively ascribed to the formation of Ge–O complexes near the front of the dislocation lines.

Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon

Effect of Germanium Doping on the Formation Kinetics of Vacancy-Dioxygen Complexes in High Dose Neutron Irradiated Crystalline Silicon

Effect of Germanium Doping on Thermal Evolution of Neutron Irradiation Induced Defects in Czochralski Si

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Effect of Vacancies on Oxygen Precipitation in Germanium-Doped Czochralski Silicon

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Germanium in Czochralski Silicon

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

The Effect of Germanium Doping on Oxygen Donors in Czochralski-Grown Silicon

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Ge-vacancy Pair in Ge-doped Czochralski Silicon

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

Effect of Germanium on the Kinetics of Boron-Oxygen Defect Generation and Dissociation in Czochralski Silicon

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Germanium doping for improved silicon substrates and devices

Effects of Nitrogen Doping on Vacancy-Oxygen Complexes in Neutron Irradiated Czochralski Silicon