Abstract:The effects of germanium (Ge)‐codoping at 1018, 1019, or 1020 cm−3 level on the grown‐in oxide precipitates in 1014 cm−3 level nitrogen (N)‐doped Czochralski (NCZ) silicon have been investigated. It is found that Ge‐codoping enhances the formation of relatively larger grown‐in oxide precipitates. However, such enhancement effect weakens with the increasing Ge‐codoping concentration. On this basis, the effect of 1018 cm−3 level Ge‐codoping on the near‐surface denuded zone (DZ) and bulk microdefects (BMDs) associated with oxygen precipitation in NCZ silicon subjected to an anneal at 1100 °C for 4 h (1100 °C/4 h) has been paid close attention. Moreover, the sustainability of the DZ in the 1100 °C/4 h ‐annealed NCZ silicon subjected to a “copper decoration” or a rigorous oxygen precipitation anneal featuring a prolonged nucleation anneal has been addressed. Thus, it is technologically significant to learn that for the 1100 °C/4 h ‐annealed NCZ silicon, the 1018 cm−3 level Ge‐codoping can remarkably increase the BMD density to better satisfy the requirement of internal gettering (IG) and also ensure the existence of a well‐defined DZ. Finally, the mechanism underlying the effect of Ge‐codoping on the formation of grown‐in oxide precipitates in NCZ silicon has been tentatively elucidated.

Effect of Germanium on the Kinetics of Boron-Oxygen Defect Generation and Dissociation in Czochralski Silicon

Germanium Effect on Oxygen‐related Defects in Czochralski Silicon

Suppression of Boron–oxygen Defects in P-Type Czochralski Silicon by Germanium Doping

Germanium in Czochralski Silicon

The Effect of Germanium Doping on Oxygen Donors in Czochralski-Grown Silicon

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Effect of Germanium Doping on Thermal Evolution of Neutron Irradiation Induced Defects in Czochralski Si

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Germanium Effect on Oxygen Precipitation in Czochralski Silicon

Effects of Germanium on Movement of Dislocations in P-Type Czochralski Silicon

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Enhancement Effect of Germanium on Oxygen Precipitation in Czochralski Silicon

Germanium effect on void defects in Czochralski silicon

Structure of Ge–O complexes in Czochralski silicon

Effect of Germanium Doping on the Formation Kinetics of Vacancy-Dioxygen Complexes in High Dose Neutron Irradiated Crystalline Silicon

Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

Germanium-doped Crystalline Silicon: Effects of Germanium Doping on Boron-Related Defects

Impact of Carbon Codoping on Generation and Dissociation of Boron–Oxygen Defects in Czochralski Silicon

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Effect of Ge Doping on the Kinetics of Iron–boron Pair Association and Dissociation in Photovoltaic Silicon