Abstract:The first-generation semiconductor materials represented by silicon (Si) and germanium (Ge) still hold a dominant position in many fields, including micro-electromechanical systems (MEMS) and integrated circuits (ICs). The processing of these materials continues to attract significant research attention for improvements in quality and efficiency. This study proposes a novel hybrid laser-enhanced particle-laden electrochemical machining (LEPL-ECM) process, whereby pulsed laser irradiation is utilized to selectively and locally enhance the electrical conductivity of Ge at specific locations. A neutral electrolyte jet, containing abrasive diamond particles, is applied to the location on the wafer surface opposite the laser irradiation, facilitating a localized and enhanced electrochemical dissolution. The effect of micro-particle erosion effectively removes the generated oxides and potential passivation layers, ensuring continuous and efficient electrochemical reactions. Consequently, high-quality micro-dimples with an entrance diameter of about 380-800 μm, a depth of around 138-300 μm, and a quasi-mirror surface with the roughness (Sa) of as low as 59.8 nm can be achieved within 90 seconds. Furthermore, the effects of the applied voltage, laser power and processing time on the resulting dimple characteristics and surface quality are discussed, along with a detailed morphology characterization. Dense micro-pits, radial streamlined micro-grooves and a special transitional region have been observed on dimple center, sidewall and near the edge, respectively, and the formation mechanism have been analyzed. Finally, a simulation of the electrolyte jet induced fluid pressure and velocity as well as the particle trajectory and distributions within and surrounding the dimple structure was conducted, which reveals that the synergistic mechanism associated with the hybrid material removal process involves both electrochemical corrosion and abrasive erosion.

Localized and efficient machining of germanium based on the auto-coupling between picosecond laser irradiation and electrochemical dissolution: Mechanism validation and surface characterization

Mechanisms and characterization of a novel hybrid laser-enhanced particle laden electrochemical fabrication process for high quality micro-dimples on germanium wafers

Fabrication of oxide-free dimple structure on germanium via electrochemical jet machining enhanced by opposing laser irradiation

Dry Etching of Germanium with Laser Induced Reactive Micro Plasma

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

A numerical study of picosecond laser micro-grooving of single crystalline germanium: Mechanism discussion and process simulation

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Germanium doping for improved silicon substrates and devices

Dislocation Analysis of Germanium Wafers under 1080 Nm Laser Ablation.

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Germanium Sub-Microspheres Synthesized by Picosecond Pulsed Laser Melting in Liquids: Educt Size Effects

Subsurface damage and brittle fracture suppression of monocrystalline germanium in ultra-precision machining by multiple ion implantation surface modification

Mechanism and morphology control of underwater femtosecond laser microgrooving of silicon carbide ceramics.

Efficient photon capture on germanium surfaces using industrially feasible nanostructure formation

Achieving Porous Germanium from Both P- and N-Type Epitaxial Ge-on-Si Via Bipolar Potentiostatic Etching

Laser Direct Writing for Micromachining of Freeform Surface on n-Type GaAs via Photoelectrochemical Etching

Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

Enabling tailored nanoporous germanium by quantifying the evolution of structural properties during self-irradiation