Abstract:The GaN films grown on sapphire by metal-organic chemical vapor deposition (MOCVD) have excellent crystalline quality (χmin=2.00%). Combining Rutherford backscattering/channeling (RBS/C) and high-resolution X-ray diffraction (HXRD) measurements, we investigate the radiation damage in GaN films with various doses and angles of Mg+-implantation. The results of experiments reveal that the radiation damage rises with the increasing implantation dose. Under the dose of 1×1015atom/cm2, χmin is less than 4.78%, and when implantation dose exceeds the threshold of 1×1016atom/cm2, χmin will be up to 29.5%. Random implantation causes more serious damage than channeled implantation, and in a definite range the damage level rises with a larger implantation angle. At the implantation angles of 0°,4°,6°and 9°deviating from〈0001〉, χmin(%)is 6.28,8.46,10.06 and 10.85, respectively, at a dose of 4×1015atom/cm2. After annealing at 700℃ for 10min and then 1050℃ for 20s, the damage recovers to some extend. The crystalline quality of the sample with 1×1016atom/cm2 implanted was reduced to 19.08%. In addition, the annealing condition of 1000℃ for 30s is more efficient and the damage recovers better.

Structural and magnetic impact of Cr +-implantation into GaN thin film

Role of Substrate Temperature on Structure and Magnetization of Cr-implanted GaN Thin Film

Structural and Magnetic Properties of Co+ Implanted N-Gan Dilute Magnetic Semiconductors

Characterization of N-Gan Dilute Magnetic Semiconductors by Cobalt Ions Implantation at High-Fluence

Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

Magnetic and structural properties of Fe-implanted GaN at room temperature

Study of Radiation Damage in Mg+-implanted GaN

Synthesis and Characterization of High Quality Ferromagnetic Cr-doped GaN and AlN Thin Films with Curie Temperatures above 900K

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Formation and Dissolution of Microcrystalline Graphite in Carbon-Implanted Gan

Unidirectional Expansion of Lattice Parameters in GaN Induced by Ion Implantation

High-resolution Transmission Microscope Observation of Both Nanometer Crystalline Diamond and Graphite in C-implanted GaN

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

High Pressure Processing of Ion Implanted GaN

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

Ab Initio Study of Ferromagnetism in Ga 1 − X Cr X N Thin Films

Optical and Structural Properties of Cr-Doped Gan Grown by Hvpe Method

Clustering of Cr in GaN Nanotubes and the Onset of Ferrimagnetic Order

GaN films synthesized through reactively reconstructing Ga_2O_3 films sputtered on Ga-diffused Si substrates