Abstract:To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but remains challenging. Enormous efforts have been made to transfer a GaN device layer onto a diamond substrate with a high thermal conductivity by bonding. In this work, two GaN-diamond bonded composites are prepared via modified surface activated bonding (SAB) at room temperature with silicon interlayers of different thicknesses (15 nm and 22 nm). Before and after post-annealing process at 800 oC, thermal boundary conductance (TBC) across the bonded interface including the interlayer and the stress of GaN layer are investigated by time-domain thermoreflectance and Raman spectroscopy, respectively. After bonding, the 15 nm Si interlayer achieved a higher TBC. The post-annealing significantly increased the TBC of both interfaces, while the TBC of 22 nm silicon interlayer increased greater and became higher than that of 15 nm. Detailed investigation of the microstructure and composition of the interfaces were carried out to understand the difference in interfacial thermal conduction. The obtained stress was no more than 230 MPa for both before and after the annealing, and this high thermal stability of the bonded composites indicates that the room temperature bonding can realize a GaN-on-diamond template suitable for further epitaxial growth or device process. This work brings a novel strategy of SAB followed by high-temperature annealing to fabricate a GaN-on-diamond device with a high TBC.

High-resolution Transmission Microscope Observation of Both Nanometer Crystalline Diamond and Graphite in C-implanted GaN

Formation and Dissolution of Microcrystalline Graphite in Carbon-Implanted Gan

High-Resolution Transmission Electron Microscopy Imaging Of Carbon Nanostructures

Enhanced Damage Buildup in C+-implanted GaN Film Studied by a Monoenergetic Positron Beam

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

The enhanced GaN deposition on highly N-incorporated diamond substrate

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

Nanostructure of GaN and SiC Nanowires Based on Carbon Nanotubes

Structural and magnetic impact of Cr +-implantation into GaN thin film

Structural Properties of Ne Implanted GaN

Si Implantation in GaN at Elevated Temperatures

A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance

High Resolution Transmission Electron Microscopy Study Of The Initial Growth Of Diamond On Silicon

Impact of High-Temperature Mg-implantation on Defects and Dopants Distribution in GaN

Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Insight into the Near-Conduction Band States at the Crystallized Interface Between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Mechanical Properties of GaN Single Crystals Upon C Ion Irradiation: Nanoindentation Analysis