Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers. Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.

Enhanced Damage Buildup in C+-implanted GaN Film Studied by a Monoenergetic Positron Beam

Study of Radiation Damage in Mg+-implanted GaN

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

Structural Properties of Ne Implanted GaN

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

An Evidence of Defect Gettering in GaN

Impact of High-Temperature Mg-implantation on Defects and Dopants Distribution in GaN

Formation and Dissolution of Microcrystalline Graphite in Carbon-Implanted Gan

Detail Study on Lattice Deformation and Recovery of GaN by Mg-ion-implantation and the Subsequent Thermal Annealing

Damage Evolution in Gan under Mev Heavy Ion Implantation

Influence of Implanted Mg Concentration on Defects and Mg Distribution in GaN

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

Characteristics of High-Energy N+-Implanted Damage in Gasb

Property Manipulation Through Pulsed Laser Annealing in High Dose Mg-implanted GaN

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Research on Evolution of Relevant Defects in Heavily Mg-Doped GaN by H Ion Implantation Followed by Thermal Annealing

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Structural and magnetic impact of Cr +-implantation into GaN thin film

Analysis of Implantation-Induced Damage and Amorphization of Gasb