Abstract:Annealing Mg-implanted homoepitaxial GaN at temperatures above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects, in the form of inversion domains, contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. Triple-axis x-ray data reveal that implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that strain-inducing point defects formed during implantation have reconfigured and inversion domains are formed. However, annealing at temperatures of 1400–1500 °C (one GPa N2 overpressure) eliminates the presence of the inversion domains. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop density is observed after annealing at the higher temperatures and longer times. Additionally, once inversion domains are formed and the samples are cooled to room temperature, they are shown to dissolve with subsequent annealing above 1400 °C. While such defects have been observed before, the important finding that such defects can be dissolved with a short, higher temperature step is key. Earlier work [Breckenridge et al., J. Appl. Phys. Lett. 118, 022101 (2021)] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements earlier work by identifying the inversion domains, which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (>1400 °C) annealing cycles to activate Mg in GaN, even if the Mg-containing inversion domains had been formed during lower temperature annealing.

Influence of Implanted Mg Concentration on Defects and Mg Distribution in GaN

Impact of High-Temperature Mg-implantation on Defects and Dopants Distribution in GaN

Cathodoluminescene Study of Mg Implanted GaN: the Impact of Dislocation on Mg Diffusion

Mg Diffusion and Activation along Threading Dislocations in GaN

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence

Study of Radiation Damage in Mg+-implanted GaN

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography

Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN

Research on Evolution of Relevant Defects in Heavily Mg-Doped GaN by H Ion Implantation Followed by Thermal Annealing

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

Non-Equilibrium Acceptor Concentration in Gan : Mg Grown by Metalorganic Chemical Vapor Deposition

Detail Study on Lattice Deformation and Recovery of GaN by Mg-ion-implantation and the Subsequent Thermal Annealing

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Lattice Disorder and N Elemental Segregation in Ion Implanted GaN Epilayer