Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers. Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.

Mg Diffusion and Activation along Threading Dislocations in GaN

Cathodoluminescene Study of Mg Implanted GaN: the Impact of Dislocation on Mg Diffusion

Influence of Implanted Mg Concentration on Defects and Mg Distribution in GaN

Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography

Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Influence of Mn-doping on Densities of Screw- and Edge-Type Threading Dislocations in Ga1−xMnxN Grown by Metal Organic Chemical Vapor Deposition

Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

P-Type Gan Growth from A Single Gan Precursor Via Molecular Beam Epitaxy and Dopant Activation

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Mg-doping and free-hole properties of hot-wall MOCVD GaN

Study of the heavily p-type doping of cubic GaN with Mg

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Impact of High-Temperature Mg-implantation on Defects and Dopants Distribution in GaN

Diffusion of Mn in gallium nitride: Experiment and modelling

Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN Via Mg Co-doped with 4D-Element (In)

Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0.15Ga0.85N Superlattice with AlN Interlayer

Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD