Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers. Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.

Cathodoluminescene Study of Mg Implanted GaN: the Impact of Dislocation on Mg Diffusion

Mg Diffusion and Activation along Threading Dislocations in GaN

Influence of Implanted Mg Concentration on Defects and Mg Distribution in GaN

Modeling Uphill Diffusion of Mg Implants in Gaas Using Suprem-Iv

Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography

Impact of High-Temperature Mg-implantation on Defects and Dopants Distribution in GaN

Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Observation of 2D-magnesium-intercalated gallium nitride superlattices

Characterization of Mg-Doped Gan

Cathodoluminescence Study on the Impurity Behaviors at Threading Dislocations in GaN

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN

Lattice Disorder and N Elemental Segregation in Ion Implanted GaN Epilayer

Cathodoluminescence study of GaN-based film structures

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

Study of Radiation Damage in Mg+-implanted GaN

Strain Property Studies of GaN:Mg Films Grown by MOCVD

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN