Abstract:The chemical transformation of nanowire templates into nanotubes is a promising avenue toward hollow one-dimensional (1D) nanostructures. To date, high-quality single crystalline tubes of nonlayered inorganic crystals have been obtained by solid-state reactions in diffusion couples of nanowires with deposited thin film shells, but this approach presents issues in achieving single-phase tubes with a desired stoichiometry. Chemical transformations with reactants supplied from the gas- or vapor-phase can avoid these complications, allowing single-phase nanotubes to be obtained through self-termination of the reaction once the sacrificial template has been consumed. Here, we demonstrate the realization of this scenario with the transformation of zincblende GaAs nanowires into single-crystalline cubic γ-Ga2S3 nanotubes by reaction with sulfur vapor. The conversion proceeds via the formation of epitaxial GaAs-Ga2S3 core-shell structures, vacancy injection and aggregation into Kirkendall voids, elastic relaxation of the detached Ga2S3 shell, and finally complete incorporation of Ga in a crystalline chalcogenide tube. Absorption and luminescence spectroscopy on individual nanotubes show optoelectronic properties, notably a ∼3.1 eV bandgap and intense band-edge and near band-edge emission consistent with high-quality single crystals, along with transitions between gap-states due to the inherent cation-vacancy defect structure of Ga2S3. Our work establishes the transformation of nanowires via vapor-phase reactions as a viable approach for forming single-crystalline hollow 1D nanostructures with promising properties.

Nanostructure of GaN and SiC Nanowires Based on Carbon Nanotubes

Synthesis and Characterization of SiC Nanowires Using Silicon Evaporation

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Microstructure and growth mechanism of SiC nanowires with periodically fluctuating hexagonal prisms by CVD

Observation of intermediate template directed SiC nanowire growth in Si-C-N systems

First-principles study on structural and electronic properties of copper nanowire encapsulated into GaN nanotube

Growth of SiC Nanorods Prepared by Carbon Nanotubes-Confined Reaction

Single-Crystalline γ-Ga2S3 Nanotubes via Epitaxial Conversion of GaAs Nanowires

Theoretical and experimental study of the mechanism for preparation of SiC nanowires by carbothermal reduction

Synthesis and Field Emission Studies of Tower-Like GaN Nanowires.

Synthesis and Microstructure of Epitaxial SiC Nanowires

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Growth and Morphology of One-Dimensional SiC Nanostructures Without Catalyst Assistant

Growth of GaN Nanowires on Graphene

Simple And High-Yield Method For Synthesizing Single-Crystal Gan Nanowires

Large-scale synthesis and characterization of hexagonal prism-shaped SiC nanowires.

Zn-dopant dependent defect evolution in GaN nanowires

Synthesis of MgO Nanowires Combined with C Nanotubes

High-Quality Gan Nanowires Synthesized Using A Cvd Approach

Studies on the Nucleation of Mbe Grown Iii-Nitride Nanowires on Si

High-resolution Transmission Microscope Observation of Both Nanometer Crystalline Diamond and Graphite in C-implanted GaN