Abstract:The efficacy of various non-diamond carbon films as precursors for diamond nucleation on unscratched silicon substrates was investigated with a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were partially coated with various carbonaceous substances such as clusters consisting of a mixture of C60 and C70, evaporated films of carbon and pure C70, and hard carbon produced by a vacuum are deposition technique. For comparison, diamond nucleation on silicon substrates coated with submicrometer-sized diamond particles and uncoated smooth silicon surfaces was also examined under similar conditions. Except for evaporated carbon films, significantly higher diamond nucleation densities were obtained by subjecting the carbon-coated substrates to a low-temperature high-methane concentration hydrogen plasma treatment prior to diamond nucleation. The highest nucleation density (∼3 × 108 cm−2) was obtained with hard carbon films. Scanning electron microscopy and Raman spectroscopy demonstrated that the diamond nucleation density increased with the film thickness and etching resistance. The higher diamond nucleation density obtained with the vacuum are-deposited carbon films may be attributed to the inherent high etching resistance, presumably resulting from the high content of sp3 atomic bonds. Microscopy observations suggested that diamond nucleation in the presence of non-diamond carbon deposits resulted from carbon layers generated under the pretreatment conditions.

High Resolution Transmission Electron Microscopy Study Of The Initial Growth Of Diamond On Silicon

A nucleation site and mechanism leading to epitaxial growth of diamond films

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

The Microstructure Of Inclusions In Nanocrystalline Carbon-Films Deposited At Low-Temperature

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

Epitaxial growth of SiC on (100) Diamond

Nano-crystalline Diamond Films Synthesized at Low Temperature and Low Pressure by Hot Filament Chemical Vapor Deposition

Interfacial study of cubic boron nitride films deposited on diamond

Electron-Emission-Enhanced Diamond Nucleation on Si by Hot Filament Chemical Vapor Deposition

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Effect of Nano-Ni Catalyst on the Growth and Characterization of Diamond Films by HFCVD

Nucleation of Diamond on Silicon Wafers Using C 60 in the Hot Filament Chemical Vapour Deposition System

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

Study on Nucleation and Growth Morphology of Diamond on C60 Film

A Study of Interface Structure Between Diamond Film and Silicon Substrate

Growth of Diamond Films on Si3n4 Coated Silicon Substrates

Diamond Nucleation on Unscratched Silicon Substrates Coated with Various Non-Diamond Carbon Films by Microwave Plasma-Enhanced Chemical Vapor Deposition