Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition
Lixuan Tai,Daming Zhu,Xing Liu,Tieying Yang,Lei Wang,Rui Wang,Sheng Jiang,Zhenhua Chen,Zhongmin Xu,Xiaolong Li
DOI: https://doi.org/10.1007/s40820-017-0173-1
IF: 26.6
2017-01-01
Nano-Micro Letters
Abstract:The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates.