[Physiopathological and clinical correlations between the digestive system and cardiac insufficiency].

G. Dogliotti,A. Allodi

Abstract:

What problem does this paper attempt to address?

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

QJ Chen,LX Wang,Z Zhang,J Yang,ZD Lin

DOI: https://doi.org/10.1063/1.116451

IF: 4

1996-01-01

Applied Physics Letters

Abstract:Expitaxially oriented growth of diamond film on Si(001) was achieved using hot filament chemical vapor deposition. The epitaxial relationship between the film and the substrate was confirmed by the observation through scanning electron microscopy and high-resolution transmission electron microscopy (HRTEM) as follows: Dia(001)//Si(001) and Dia〈110〉//Si〈110〉 with a misorientation angle of 9° between Dia(001) and Si(001). This reports the HRTEM observation of the largest area of the diamond/Si interface (larger than 880 Å). It demonstrates that the intermediate β-SiC layer is unnecessary for achieving diamond epitaxy on Si. Discussion reveals that the value of the misorientation angle between Dia(001) and Si(001) is not unique and should be controlled to deposit single-crystal diamond films on Si.
Morphological Diversification of Fish as a Consequence of the Divergence of Ontogenetic Trajectories

M. V. Mina

DOI: https://doi.org/10.1023/A:1012842221732

2001-11-01

Russian Journal of Developmental Biology

Abstract:
Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Qijin Chen,Yan Chen,Jie Yang,Zhangda Lin

DOI: https://doi.org/10.1016/0040-6090(95)07086-9

IF: 2.1

1996-01-01

Thin Solid Films

Abstract:A very low pressure (13 Pa), high substrate temperature and a.c. discharge for the nucleation siage have been applied. Uniformly oriented and textured growth of (111) diamond (dia) with dia(111)//Si(111) and dia<<1(1)over bar>0>//Si<<1(1)over bar>0> has been achieved on not only well polished but also scratched silicon substrates using hot filament chemical vapor deposition. A probable explanation, heteroepitaxy, was hypothesized. The as-grown diamond films were characterized by Raman spectroscopy, scanning electron microscopy, and X-ray analysis.
Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

F. Stubhan,M. Ferguson,H.-J. Füsser,R. J. Behm,H.‐J. Füsser

DOI: https://doi.org/10.1063/1.113315

IF: 4

1995-04-10

Applied Physics Letters

Abstract:Heteroepitaxial nucleation of diamond on mirror-polished Si(001) substrates was achieved in a conventional hot filament reactor. The key to this achievement was the development of a bias-enhanced nucleation process step analogous to the procedure for heteroepitaxial nucleation in microwave plasma chemical vapor deposition. The nucleation and subsequent growth of diamond were characterized by means of scanning electron microscopy, scanning tunneling microscopy, and Raman spectroscopy. Well-developed diamond (001) crystal faces are observed even for very thin (∼0.3 μm) diamond films. High-resolution scanning electron microscopy investigations of the early stage of growth revealed oriented crystallites on the substrate surface with a nucleation density of 109 cm−2.

physics, applied
Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

J YANG,ZD LIN,LX WANG,S JIN,Z ZHANG

DOI: https://doi.org/10.1088/0022-3727/28/6/018

1995-01-01

Journal of Physics D Applied Physics

Abstract:Diamond films were synthesized by the hot-filament chemical vapour deposition (HFCVD) method on Si(100) substrates with surface biasing pre-treatment. Evidence has been obtained from high-resolution cross sectional electron microscopy (HREM) that the diamond films grown on Si wafers showed localized epitaxy. There is an angle of approximately 7.3 degrees between Si(100) and D(100) hetero-epitaxial crystalline planes. The same type of twins (coherent twin boundaries of type, Sigma = 3) exists on and near the interface. It is shown that the pre-treatment of the substrate is a key factor for the localized hetero-epitaxy of diamond films on Si wafers.
The Crystallographic Relationship of Heteroepitaxial Diamond Films on Scratched Silicon Substrates

QJ Gao,LP You,XH Pan,F Zhang,XF Peng,ZD Lin

DOI: https://doi.org/10.1016/s0925-9635(97)00147-7

IF: 3.806

1997-01-01

Diamond and Related Materials

Abstract:By using the straight hot filament chemical vapor deposition method with one falt horizonatal filament, diamond films were rapidly grown on a scratched silicon substrate. Observing two kinds of interface structures of the samples by cross-section high-resolution transmission electron microscopy, we found that diamond {111}-oriented films are epitaxially grown on β-SiC{111} planes with a tilt angle of about 7° around the common [110] axis. We also found that diamond〈771〉 planes are parallel to silicon〈111〉 planes on which diamonds are directly epitaxially grown on silicon substrate. The interface dislocations are of either 60°-type or Schockley partial dislocation in relation to our observations.
Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

QJ Gao,LP You,XH Pan,F Zhang,XF Peng,ZD Lin

DOI: https://doi.org/10.1088/0256-307x/14/2/019

1997-01-01

Chinese Physics Letters

Abstract:Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament. The orientation relationship of epitaxial diamond films on silicon substrate has been investigated by cross-sectional high-resolution transmission electron microscopy. We found one excellent epitaxial configuration and according to the experimental result we suggest a corresponding model. The lattice misfit is only 0.1-2.8% related to our model and the analysis of 60° type interface dislocation also supports this model.
Approach of selective nucleation and epitaxy of diamond films on Si(100)

X. Jiang,E. Boettger,M. Paul,C.‐P. Klages

DOI: https://doi.org/10.1063/1.112030

IF: 4

1994-09-19

Applied Physics Letters

Abstract:Heteroepitaxial diamond films were selectively nucleated and grown on mirror-polished single crystalline (100) silicon by microwave plasma assisted chemical vapor deposition (MWCVD). The silicon substrates were coated by 0.5 μm thick SiO2 films patterned by a standard photolithography process. The selective nucleation was performed under a negative substrate bias condition. Results show that fine patterns of (100) oriented diamond films can be obtained with high deposition selectivity and fine-line definition. In spite of the relatively large crystal size a structure edge roughness of <0.3 μm was achieved.

physics, applied
Electron-Emission-Enhanced Diamond Nucleation on Si by Hot Filament Chemical Vapor Deposition

QJ Chen,ZD Lin

DOI: https://doi.org/10.1063/1.116164

IF: 4

1996-01-01

Applied Physics Letters

Abstract:Diamond nucleation on mirror-polished Si was enhanced by electron emission using hot filament chemical vapor deposition. The nucleation density was 108 cm−2. The mechanism of diamond nucleation is carefully discussed. It is surmised that it is electron emission that is responsible for the enhancement of the diamond nucleation in our experiments.
Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Xiufei Hu,Yan Peng,Xiwei Wang,Xiaotong Han,Bin Li,Yiqiu Yang,Mingsheng Xu,Xiangang Xu,Jisheng Han,Dufu Wang,Kuan Yew Cheong

DOI: https://doi.org/10.1016/j.mtcomm.2022.103563

IF: 3.8

2022-04-01

Materials Today Communications

Abstract:Diamond was deposited on mirror-like polished, grinded, and grooved 4H-SiC substrates by microwave plasma chemical vapor deposition. The nucleation process and grain morphology varied with different growth time and concentrations of methane in hydrogen were observed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. It was shown that the nucleation density increased by three orders of magnitude on the grinded substrate, compared with mirror-like polished substrate. The concentration of methane is critical factor that affected the nucleation density, grain size and developing facet. Furthermore, the transformation from nucleation to continuous film was revealed on side wall of the grooved substrate. And the nucleation growth mechanism of diamond on the 4H-SiC substrate was discussed, and a four-stage nucleation growth mechanism has been proposed with the formation of carbon clusters by converting from sp1 to sp2 and sp3 carbon, shaping into preferred crystal planes and forming a well-defined cubo-octahedral diamond grains before producing a compact and coalesced diamond film.

materials science, multidisciplinary
Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

X. Jiang,K. Schiffmann,C.-P. Klages,D. Wittorf,C. L. Jia,K. Urban,W. Jäger

DOI: https://doi.org/10.1063/1.367012

IF: 2.877

1998-03-01

Journal of Applied Physics

Abstract:Heteroepitaxial [001]-oriented diamond films with considerably increased lateral grain size and strongly improved orientational perfection could be prepared by microwave plasma-assisted chemical vapor deposition using a [001]-textured growth process on Si (001) substrates followed by a [110] step-flow growth process. The diamond films were characterized by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The results indicate that the diamond crystals increase their lateral dimensions at the (001) film surface either by coalescence of grains combined with a termination of the propagation of grain boundaries or by changing the grain boundary plane orientations from preferentially vertical to preferentially parallel directions with respect to the (001) growth faces. In the second case, the grains with relatively large angle deviation from the ideal epitaxial orientation are overgrown by those with relatively small angle deviation. As a result, the degree of orientational perfection of the films improves considerably in comparison to that of films prepared by the established process of [001]-textured growth. The presence of boron in the gas phase was found to strongly enhance the step-flow lateral grain growth. It was possible to achieve deposition of a thin boron-doped diamond film characterized by a full width at half maximum value of the measured tilt angle distribution of only 2.1°.

physics, applied
Experimental Approach to the Mechanism of the Negative Bias Enhanced Nucleation of Diamond on Si Via Hot Filament Chemical Vapor Deposition

QJ Chen,ZD Lin

DOI: https://doi.org/10.1063/1.362889

IF: 2.877

1996-01-01

Journal of Applied Physics

Abstract:The mechanism of the negative bias enhanced nucleation of diamond on silicon has been studied by a set of experiments using hot filament chemical vapor deposition. Nucleation enhancement was achieved for experimental configurations either with or without the application of a negative bias to the mirror-polished Si substrates. The obtained nucleation density ranged from 108 to 1010 cm−2. The as-deposited films were characterized by scanning electron microscopy and Raman spectroscopy. Our results demonstrate that the electron emission from the diamond coating the substrate holder, which is speculated to greatly increase the concentration of atomic hydrogen and dissociated hydrogen radicals on/near the substrate surface is responsible for the nucleation enhancement during the bias pretreatment.
Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition

Li Rong-Bin,

DOI: https://doi.org/10.7498/aps.58.1287

IF: 0.906

2009-01-01

Acta Physica Sinica

Abstract:Sulphur-doped and boron-sulphur co-doped diamond thin films were prepared by using chemical vapour deposition on p-type Si (100) and HTHP-diamond (100) substrates. The structures and properties of CVD diamond films were investigated with atom force microscope (AFM), Raman spectrum, sanning tunneling microscopy (STM) and current imaging tunneling current spectroscopy (CITS). Comparing the structures and properties of the doped diamond films grown on Si and HTHP diamond substrates, we find that the films deposited on Si substrates are composed of spherical grains with size of one hundred nanometer, the doped diamond films on Si substrates consist of large grains with a high fraction of grain boundaries due to the successive secondary nucleation,and the roughness of the films is estimated to be around 18.5nm. The doped diamond films on HTHP diamond substrates are composed of nanometer crystal grains with the sizes of 10—50nm and the film surface is flat with the roughness estimated to be around 1.8nm. Raman and resistivity measurements reveal that the films deposited on HTHP diamond substrates have much higher quality, fewer defects and lower stress, and higher conductivity than the films grown on Si substrates. Current imaging tunnelling current spectroscopy (CITS) images indicate that some grain boundaries and crystalline facets near the grain boundaries are he high electron emission regions. However, the grain boundaries and crystalline facets of the doped diamond films on HTHP diamond substrates have uniform electron emission currents, which indicates that the doped atoms are uniformly distributed in that films. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate the n-type conduction.

physics, multidisciplinary
Diamond Nucleation on Smooth Si3n4-Coated Substrate

Xu Ning,Zheng Zhihao,Du Yuancheng

DOI: https://doi.org/10.1557/jmr.1997.0442

1997-01-01

Abstract:Diamond was deposited on smooth Si3N4-coated Si substrates using hot-filament chemical vapor deposition (CVD). Prior to diamond deposition, the substrates were pretreated under high temperature (700–900 °C) by decomposed pure hydrogen. The experimental results show that these pregrowth processes at a substrate temperature of 850 °C enhanced the diamond nucleation on Si3N4. This indicated that decomposed hydrogen acted on the substrate to produce active centers (<100 nm), which promoted diamond nucleation. It has also been suggested that Si3N4 coating can inhibit carbon transport into the substrate, and it is beneficial to the diamond nucleation.
Ion beam nucleation of diamond

y lifshitz,n g shang,x f duan,qingquan li,l m peng,i bello,s t lee

DOI: https://doi.org/10.1109/WBL.2001.946539

2001-01-01

Abstract:Nucleation of diamond on non-diamond substrates is one of the most studied and least understood elements of the field of diamond films. This issue is crucial for the production of epitaxial single crystalline diamond on silicon, The most reliable method for nucleation of diamond on nondiamond substrates currently applied is bias enhanced nucleation (BEN). Oriented growth of diamond on non-diamond substrates is achieved by bombardment of the biased substrate with energetic species formed in a CH/sub 4//H/sub 2/ plasma (several percent CH/sub 4/). Previous attempts to systematically nucleate diamond on non-diamond substrates by direct ion beam bombardment have failed, though sporadic reports on diamond formation using ion beams have appeared. In the present work we report the nucleation of diamond on silicon substrates by direct ion beam deposition (using a Kaufmann source fed by a mixture of gases). High resolution TEM reveals diamond nuclei in two different nucleation environments: directly on the silicon substrate; and embedded in an amorphous carbon matrix.
Epitaxial growth of SiC on (100) Diamond

A. Tsai,A. Aghajamali,N. Dontschuk,B. C. Johnson,M. Usman,A. K. Schenk,M. Sear,C. I. Pakes,L. C. L. Hollenberg,J. C. McCallum,S. Rubanov,A. Tadich,N. A. Marks,A. Stacey

DOI: https://doi.org/10.48550/arXiv.2002.07314

2020-02-18

Abstract:We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realising heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high power electronics. At a fundamental level, the study redefines our understanding of heterostructure formation with large lattice mismatch.

Materials Science,Computational Physics
Bias process for heteroepitaxial diamond nucleation on Ir substrates

Weihua Wang,Shilin Yang,Benjian Liu,Xiaobin Hao,Jiecai Han,Bing Dai,Jiaqi Zhu

DOI: https://doi.org/10.1007/s42823-022-00441-8

2022-12-09

Carbon letters

Abstract:Heteroepitaxy is a better method of enlarging SCD wafer size than homoepitaxy. In this work, several aspects of the bias process for heteroepitaxial diamond nucleation are studied experimentally. First, with increasing bias time, the diamond-nucleation pathway is found to transform from “isolated-crystal nucleation” to “typical domain-nucleation” and back to “isolated-crystal nucleation.” An interdependent relationship between bias voltage and bias time is proposed: the higher the bias voltage, the shorter the bias time. Second, a correlation exists between the threshold bias voltage and reactor-chamber pressure: a higher reactor chamber pressure usually requires a higher threshold bias voltage to realize “typical domain nucleation.” Third, diamond bias-enhanced nucleation and growth is observed at a high CH4 content, where the dynamic equilibrium between amorphous-carbon-layer deposition and atomic-hydrogen etching is broken. Finally, epitaxial nucleation is obtained on a substrate with ∅30 mm in a home-made MPCVD setup.

materials science, multidisciplinary,chemistry
Morphologic Study of (100) Single-Crystal Diamond Films Epitaxially Grown by Chemical-Vapor-Deposition

ZM ZHANG,HM CHENG,SH LI,QY CAI,DL LING,SJ WANG,ZW HU,SS JIANG,CZ GE,NB MING

DOI: https://doi.org/10.1016/0022-0248(93)90262-u

IF: 1.8

1993-01-01

Journal of Crystal Growth

Abstract:Homoepitaxial diamond films were grown by microwave plasma chemical vapor deposition (CVD) on diamond substrates with (100) orientation. It was shown that the variation of the acetone concentration affected directly the morphology and structure of epitaxial films. With increasing acetone concentration, the growth pattern changed from the occurence of a linear arrangement of growth spiral (0.9 vol%) and parasitic nuclei (1.7 vol%) to the appearance of a local cellular structure (2.6 vol%). Addition of argon to reaction gases enhanced two-dimensional growth and depressed parasitic nucleation, leading to epitaxial single crystal films with both smooth surface and high degree of crystallinity.
Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

R. N. Tiwari,Li-Di Chang,M. Yoshimura,J. Tiwari

DOI: https://doi.org/10.1021/JP2041179

2011-07-21

Abstract:Nucleation of diamond is of great importance for its growth, and a detailed understanding of the nucleation process is, therefore, desired for many applications. The pretreatment of the substrate surface may impact the initial growth period. This study demonstrates the synthesis of diamond films by microwave plasma chemical vapor deposition on a Pt/SiO2/Si substrate. The Pt particles were deposited on the SiO2/Si surface at room temperature, whereas adamantane was seeded on the SiO2/Si surface by ultrasonic treatment. The Pt particles on the SiO2 surface behave as a catalyst, which adsorb hydrocarbons from adamantane contained plasma and give distinct features of carbon in the early stage deposition. The adamantane transforms not only in the nanodiamond phase but also in other carbon phases, which can then act as nuclei for diamond growth. These kinds of phases enhanced the diamond density at partially low temperature deposition. The presence of an oxide intermediate layer between Pt and Si prevents silic...

Materials Science,Engineering,Chemistry
Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

D.J. Qiu,A.M. Feng,H.Z. Wu

DOI: https://doi.org/10.1016/j.diamond.2003.11.086

IF: 3.806

2004-01-01

Diamond and Related Materials

Abstract:Nanostructured diamond films (NDFs) were grown on fine-polished Si(001) substrates by radio-frequency plasma-enhanced hot-filament chemical vapor deposition at low gas pressure of approximately 2 Torr. High resolution field-emission scanning electron microscopy (FESEM), X-ray diffraction and Raman scattering spectroscopy were employed to characterize the NDFs. FESEM measurement indicated that diamond nuclei density exceeded 1010 cm−2 after growth for 20 min, which should render potential applications, such as in the fabrication of diamond-related field-emission devices. Photoluminescence excitation characterizations revealed the sharp optical absorption band edge of NDFs, and the band gap is 5.34 eV.

[Physiopathological and clinical correlations between the digestive system and cardiac insufficiency].

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

Morphological Diversification of Fish as a Consequence of the Divergence of Ontogenetic Trajectories

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

The Crystallographic Relationship of Heteroepitaxial Diamond Films on Scratched Silicon Substrates

Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

Approach of selective nucleation and epitaxy of diamond films on Si(100)

Electron-Emission-Enhanced Diamond Nucleation on Si by Hot Filament Chemical Vapor Deposition

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Experimental Approach to the Mechanism of the Negative Bias Enhanced Nucleation of Diamond on Si Via Hot Filament Chemical Vapor Deposition

Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition

Diamond Nucleation on Smooth Si3n4-Coated Substrate

Ion beam nucleation of diamond

Epitaxial growth of SiC on (100) Diamond

Bias process for heteroepitaxial diamond nucleation on Ir substrates

Morphologic Study of (100) Single-Crystal Diamond Films Epitaxially Grown by Chemical-Vapor-Deposition

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates