Abstract:Single crystal diamond (SCD) is a promising material to satisfy emerging requirements of high-demand fields, such as microelectronics, beta batteries and wide-spectrum optical communication systems, due to its excellent optical characteristics, elevated breakdown voltage, high hardness and superior thermal conductivity. For such applications, it is essential to study the optically active defects in as-grown diamonds, namely three-dimensional defects (such as stacking faults and dislocations) and the inherent defects arising from the cultivation method. This paper reports the growth of SCD films on a commercial HPHT single-crystal diamond seed substrate using a 2.45 GHz microwave plasma-assisted chemical vapor deposition (MWPACVD) technique by varying the methane (CH4) gas concentration from 6 to 12%, keeping the other parameters constant. The influence of the CH4 concentration on the properties, such as structural quality, morphology and thickness, of the highly oriented SCD films in the crystalline plane (004) was investigated and compared with those on the diamond substrate surface. The SCD film thickness is dependent on the CH4 concentration, and a high growth rate of up to 27 μm/h can be reached. Raman spectroscopy, high-resolution X-ray diffractometry (HRXRD), scanning electron microscopy (SEM), surface profilometry and optical microscopic analyses showed that the produced homoepitaxial SCD films are of good quality with few macroscopic defects.

Morphologic Study of (100) Single-Crystal Diamond Films Epitaxially Grown by Chemical-Vapor-Deposition

Characterization of an Epitaxial-Growth Diamond Thin Film

Growth and morphological studies of (100) textured diamond thin films by microwave plasma-enhanced chemical vapor deposition

Morphologies and structures of chemical vapor deposited diamond films and film-substrate interfaces

Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

Surface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations

Approach of selective nucleation and epitaxy of diamond films on Si(100)

Study on Morphologies and Structures of Diamond Films Synthesized on Cemented Carbide Substrates

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

Evolution of surface morphology and optical transmittance of single crystal diamond film by epitaxial growth

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the Dc Arcjet Vapor Deposition Method

Crystalline Diamond Growth in Thin Films Deposited from a CH4/Ar Rf Plasma

A nucleation site and mechanism leading to epitaxial growth of diamond films

Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond

High-speed growth of high-quality polycrystalline diamond films by MPCVD

The Structural Evolution Of Nanocrystalline Diamond Films Synthesized By R.F. Pecvd

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition