Abstract:Basic understanding of the fundamental processes in crystal growth as well as the structural quality of diamond synthesized by chemical vapour deposition on iridium surfaces has reached a high level for samples with (001) orientation. Diamond deposition on the alternative (111) surface is generally more challenging but of appreciable technological interest, too. In the present work, heteroepitaxy of diamond on Ir/YSZ/Si(111) with different off-axis angles and directions has been studied. During the growth of the first microns, strong and complex intrinsic stress states were rapidly formed. They restricted the range of suitable temperatures in this study to values between 830 °C and 970 °C. At low-stress conditions, the maximum growth rates were about 1 μm/h. They facilitated long-time processes which yielded pronounced structural improvements with minimum values of 0.08° for the azimuthal mosaic spread, 4 × 107 cm−2 for the dislocation density and 1.8 cm−1 for the Raman line width. This refinement is even faster than on (001) growth surfaces. It indicates substantial differences between the two crystal directions in terms of merging of mosaic blocks and annihilation of dislocations. Crystals with a thickness of up to 330 μm have been grown. The correlation of photoluminescence and μ-Raman tomograms with topography data also revealed fundamental differences in the off-axis growth between (001) and (111) orientation. Finally, the analysis of the microscopic structures at the growth surface provided the base for a model that can conclusively explain the intriguing reversal of stress tensor anisotropy caused by a simple inversion in sign of the off-axis angle.

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Approach of selective nucleation and epitaxy of diamond films on Si(100)

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

Coalescence as a key process in wafer-scale diamond heteroepitaxy

Growth of well-adhered and smooth diamond thin films on fused silica substrates

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

NV-doped microstructures with preferential orientation by growth on heteroepitaxial diamond

Growth, stress, and defects of heteroepitaxial diamond on Ir/YSZ/Si(111)

Mosaicity reduction during growth of heteroepitaxial diamond films on iridium buffer layers: Experimental results and numerical simulations

Growth and morphological studies of (100) textured diamond thin films by microwave plasma-enhanced chemical vapor deposition

Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition

Epitaxial growth of SiC on (100) Diamond

Evolution of growth characteristics around the junction in the mosaic diamond

Growth of twin-free heteroepitaxial diamond on Ir/YSZ/Si(111)

45-degree rotated epitaxial nucleation of diamond on silicon using chemical vapor deposition

Growth and characterization of heteroepitaxial (001) and (111) diamond on Ir/sapphire structures

The effects of self-assembling off-angles on the homoepitaxial lateral outward growth of single-crystal diamond

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy