Abstract:Direct current plasma enhanced chemical vapor deposition (CVD) was employed to create polycrystalline diamond films from CH4/H2gaseous mixture at 98 mbar pressure and various substrate temperatures between 720 °C and 960 °C. The Si chips with patterns of periodic masked and open seeded zones were used as substrates. The mask free seeded areas evolved into polycrystalline diamond films after CVD process. The diamond crystallites of the films featured single crystal ordering individually with distinct cubic (100) or octahedral (111) facets on the film surfaces. Notably, specific growth conditions were determined for obtaining diamond films composed of the crystallites of nanometre and micrometre scale. These conditions are differing from those observed for non-pattern-prepared Si substrates. The nano-crystalline diamonds emerged within the 4.5-5 A current range, with growth conditions involving 3% CH4/H2mixture at 98 mbar. The micro-crystalline diamonds (MCDs) predominantly characterized by well-developed rectangular (100) crystal faces on the film surface were successfully grown with current settings of 5.5-6 A, under 3% CH4/H2mixture at 98 mbar. Furthermore, MCDs characterized by entirely crystalline (111) diamond faces forming CVD film surface were attained within a growth parameter range of 4.5-5.8 A, employing 3% CH4/H2mixture for certain samples, or alternatively, utilizing 5 A with a 1.5% CH4/H2mixture for others. Upon thorough evaluation, it was established that SiO2, TiO2, and Cr masks are well-suited materials for the planar patterning of both nano- and micro-crystalline diamond films, and the bottom-up approach can pave the way for the production of diamond planar structures through CVD, facilitated by electron beam lithography (EBL).

Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Growth of 2-inch diamond films on 4H–SiC substrate by microwave plasma CVD for enhanced thermal performance

Vertical-substrate Epitaxial Growth of Single-Crystal Diamond by Microwave Plasma-Assisted Chemical Vapor Deposition

Tetramethysilane-assisted Enhancement of Diamond Nucleation on Silicon Substrate

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Deposition of Microcrystalline Diamond Films in H2 Microwave Plasma with Graphite Powder As Hydrocarbon Precursor

Diamond Films and Particles Growth in Hydrogen Microwave Plasma with Graphite Solid Precursor: Optical Emission Spectroscopy Study

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

Crystalline Diamond Growth in Thin Films Deposited from a CH4/Ar Rf Plasma

Microwave plasma modelling in clamshell chemical vapour deposition diamond reactors

Diamond Nucleation on Unscratched Silicon Substrates Coated with Various Non-Diamond Carbon Films by Microwave Plasma-Enhanced Chemical Vapor Deposition

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

High Quality Heteroepitaxial Diamond Films On Silicon: Recent Progresses

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

Bonding Regeneration: the Driving Force of Hetero-Epitaxial Diamond Grain Coalescence on (001) Silicon

Large Area Single-Crystal Diamond Synthesis by 915 MHz Microwave Plasma-Assisted Chemical Vapor Deposition

Nano- and micro-crystalline diamond film structuring with electron beam lithography mask

Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure