Abstract:The conductivity of hydrogen-terminated diamond is a limiting factor in its application in field-effect transistor devices. The traditional preparation process hinders the improvement of the electrical properties of hydrogen-terminated diamond due to impurity elements in the diamond bulk and surface damage caused by processing near the diamond surface. To overcome this, researchers have explored the epitaxial growth of a high-purity and flat-surfaced diamond thin film on a diamond substrate. However, this approach still faces challenges in film characterization and achieving high surface smoothness. In this study, microwave plasma chemical vapor deposition technology is used to epitaxially grow a sub-micron thick diamond film on a nitrogen-doping CVD diamond substrate measuring 10mm x 10mm x 0.5mm. The influence of methane concentrations on the growth and conductivity of diamond films is investigated. The test results reveal that the growth thickness of the diamond film ranges from 230 nm to 810 nm, and the nitrogen concentration in the epitaxial layer is lower than 1×10 16 Atom/cm 3 . Three growth modes are observed for the homoepitaxial growth of the diamond thin film under different methane concentrations. A methane concentration of 4% enables two-dimensional planar growth of diamond, resulting in a smooth and flat surface with a roughness of 0.225nm (10×10μm 2 ). The formation of different surface morphologies is attributed to the growth and etching processes of diamond. Surface LEED testing indicates that the surface of the diamond film undergoes a structural transition from oxygen terminals (1×1: O) to hydrogen terminals (2×1: H) when grown for a short period of time. XPS analysis reveals an extremely low proportion of oxygen and nitrogen elements, giving the grown diamond film P-type conductivity characteristics. The Hall test results demonstrate that the hydrogen-terminated diamond film grown with a methane concentration of 4% exhibits the highest conductivity, with a square resistance of 4981 Ω/□ and a hole mobility of 207 cm 2 /Vs. This enhanced conductivity can be attributed to the lower defect density observed under these specific conditions. The findings of this study contribute to the advancement and practical application of high-power diamond devices by effectively enhancing the electrical characteristics of hydrogen-terminated diamond.

Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

Morphologic Study of (100) Single-Crystal Diamond Films Epitaxially Grown by Chemical-Vapor-Deposition

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Surface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations

Study on Morphologies and Structures of Diamond Films Synthesized on Cemented Carbide Substrates

High-rate growth of single-crystal diamond with an atomically flat surface by microwave plasma chemical vapor deposition

High-speed growth of high-quality polycrystalline diamond films by MPCVD

Novel Diamond Films Synthesis Strategy: Methanol and Argon Atmosphere by Microwave Plasma CVD Method Without Hydrogen

Large Area Single-Crystal Diamond Synthesis by 915 MHz Microwave Plasma-Assisted Chemical Vapor Deposition

Enhanced Growth Of High Quality Single Crystal Diamond By Microwave Plasma Assisted Chemical Vapor Deposition At High Gas Pressures

Express in situ measurement of epitaxial CVD diamond film growth kinetics

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

Very high growth rate chemical vapor deposition of single-crystal diamond.

Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

Growth and Surface Structrue Research of Hydrogen Terminal Diamond Thin Films

Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

Growth of well-adhered and smooth diamond thin films on fused silica substrates

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Microwave power and chamber pressure studies for single-crystalline diamond film growth using microwave plasma CVD