Abstract:We used a low-coherence interferometry for precise continuous in situ measurements of thickness and growth rate of epitaxial single crystal diamond layers in microwave plasma CVD in H2-CH4 gas mixtures in a broad range of substrate temperatures Ts (750–1150°C) and CH4 concentrations (1–13%). Rich growth kinetics is collected in a single experiment by depositing about 60 layers on one (100) Ib HPHT diamond substrate in different regimes (the substrate temperature was controlled by the microwave power) at fixed pressure P=130Torr, without the plasma switch-off. The growth rate is found to follow Arrhenius dependence with activation energy Ea=11.1±1.0kcal/mol. By appropriate choice of the substrate temperature the growth rate can be significantly enhanced. The growth rate as high as 82μm/h is achieved by optimizing the temperature and gas composition. At low CH4 content (1%) growth competes with etching by atomic hydrogen, the etching dominating at high Ts (>1000°C in the present conditions). The etching rate in pure H2 plasma was measured and activation energy Ea=9.8±0.8kcal/mol was deduced. Gas temperature Tg in the plasma core evaluated from optical emission spectra for dimer C2 (Swan band), was found to be either constant or slightly and monotonically increasing with absorbed power, whereas the absorbed microwave power density shows a decreasing, although slight, trend. This suggests the temperature depended surface reactions to play a major role in the diamond growth kinetics under variable microwave power. Raman mapping of cross-section of the produced multilayered sample confirmed high quality of diamond structure over all the deposition regimes explored.

Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

Vertical-substrate Epitaxial Growth of Single-Crystal Diamond by Microwave Plasma-Assisted Chemical Vapor Deposition

Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Express in situ measurement of epitaxial CVD diamond film growth kinetics

Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Evolution of surface morphology and optical transmittance of single crystal diamond film by epitaxial growth

Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

Morphologic Study of (100) Single-Crystal Diamond Films Epitaxially Grown by Chemical-Vapor-Deposition

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Evolution of growth characteristics around the junction in the mosaic diamond

Growth and morphological studies of (100) textured diamond thin films by microwave plasma-enhanced chemical vapor deposition

Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

The Diamond (111) Surface Reconstruction and Epitaxial Graphene Interface

Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond

Scalable Production and Supply Chain of Diamond using Microwave Plasma: a Mini-review

High-rate growth of single-crystal diamond with an atomically flat surface by microwave plasma chemical vapor deposition

Surface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations

Epitaxial Growth of Mosaic Diamond: Mapping of Stress and Defects in Crystal Junction with A Confocal Raman Spectroscopy

The Coalescence of [001]diamond Grains Heteroepitaxially Grown on (001) Silicon

Growth of Three-Dimensional Diamond Mosaics by Microwave Plasma-Assisted Chemical Vapor Deposition